High energy implanted transistor fabrication

J. Middelhoek

doi:10.1016/0921-5107(89)90070-6

High energy implanted transistor fabrication

J. Middelhoek

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Abstract

High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.

Original language	English
Pages (from-to)	15-19
Journal	Materials Science and Engineering B: Solid-State Materials for Advanced Technology
Volume	2
Issue number	1-3
DOIs	https://doi.org/10.1016/0921-5107(89)90070-6
Publication status	Published - 1989
Event	E-MRS Spring Meeting 1988 - Strasbourg, France Duration: 31 May 1988 → 2 Jun 1988

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@article{0cf47b54148e4824bf7176fa56ce29aa,

title = "High energy implanted transistor fabrication",

abstract = "High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.",

author = "J. Middelhoek",

year = "1989",

doi = "10.1016/0921-5107(89)90070-6",

language = "English",

volume = "2",

pages = "15--19",

journal = "Materials Science and Engineering B: Solid-State Materials for Advanced Technology",

issn = "0921-5107",

publisher = "Elsevier",

number = "1-3",

note = "E-MRS Spring Meeting 1988 ; Conference date: 31-05-1988 Through 02-06-1988",

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TY - JOUR

T1 - High energy implanted transistor fabrication

AU - Middelhoek, J.

PY - 1989

Y1 - 1989

N2 - High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.

AB - High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several cross-sections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.

U2 - 10.1016/0921-5107(89)90070-6

DO - 10.1016/0921-5107(89)90070-6

M3 - Article

SN - 0921-5107

VL - 2

SP - 15

EP - 19

JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology

IS - 1-3

T2 - E-MRS Spring Meeting 1988

Y2 - 31 May 1988 through 2 June 1988

ER -

High energy implanted transistor fabrication

Abstract

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