High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors

Chi T.Q. Nguyen, Duc Minh Nguyen, H.T. Vu, Evert Pieter Houwman, Hung N. Vu, A.J.H.M. Rijnders

Research output: Contribution to journalArticleAcademicpeer-review

6 Citations (Scopus)

Abstract

Relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films have been epitaxially grown via pulsed laser deposition on SrRuO3/SrTiO3 single crystal with different orientations. The high recoverable energy-storage density and energy-storage efficiency in the epitaxial PLZT thin films are mainly caused by the coexistence of relaxor and antiferroelectric-like behaviors. The recoverable energy-storage density of 12.03, 12.51 and 12.74 J/cm3 and energy-storage efficiency of 86.50, 88.14 and 88.44%, respectively, for the PLZT(001), PLZT(011) and PLZT(111) thin films measured at 1000 kV/cm. The high energy density and high efficiency indicate that the relaxor epitaxial PLZT(111) thin film is a promising candidate for high pulsed power capacitors.
Original languageEnglish
Pages (from-to)188-192
Number of pages5
JournalThin solid films
Volume636
DOIs
Publication statusPublished - 2017

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