High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors

Chi T.Q. Nguyen; Duc Minh Nguyen; H.T. Vu; Evert Pieter Houwman; Hung N. Vu; A.J.H.M. Rijnders

doi:10.1016/j.tsf.2017.06.003

High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors

Chi T.Q. Nguyen, Duc Minh Nguyen, H.T. Vu, Evert Pieter Houwman, Hung N. Vu, A.J.H.M. Rijnders

Inorganic Materials Science

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Abstract

Relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films have been epitaxially grown via pulsed laser deposition on SrRuO3/SrTiO3 single crystal with different orientations. The high recoverable energy-storage density and energy-storage efficiency in the epitaxial PLZT thin films are mainly caused by the coexistence of relaxor and antiferroelectric-like behaviors. The recoverable energy-storage density of 12.03, 12.51 and 12.74 J/cm3 and energy-storage efficiency of 86.50, 88.14 and 88.44%, respectively, for the PLZT(001), PLZT(011) and PLZT(111) thin films measured at 1000 kV/cm. The high energy density and high efficiency indicate that the relaxor epitaxial PLZT(111) thin film is a promising candidate for high pulsed power capacitors.

Original language	English
Pages (from-to)	188-192
Number of pages	5
Journal	Thin solid films
Volume	636
DOIs	https://doi.org/10.1016/j.tsf.2017.06.003
Publication status	Published - 2017

Keywords

22/4 OA procedure

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10.1016/j.tsf.2017.06.003

Nguyen2017highFinal published version, 1.23 MBLicence: Taverne

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@article{6786d8cdf51b462abd739a70aedef26a,

title = "High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors",

abstract = "Relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films have been epitaxially grown via pulsed laser deposition on SrRuO3/SrTiO3 single crystal with different orientations. The high recoverable energy-storage density and energy-storage efficiency in the epitaxial PLZT thin films are mainly caused by the coexistence of relaxor and antiferroelectric-like behaviors. The recoverable energy-storage density of 12.03, 12.51 and 12.74 J/cm3 and energy-storage efficiency of 86.50, 88.14 and 88.44%, respectively, for the PLZT(001), PLZT(011) and PLZT(111) thin films measured at 1000 kV/cm. The high energy density and high efficiency indicate that the relaxor epitaxial PLZT(111) thin film is a promising candidate for high pulsed power capacitors.",

keywords = "22/4 OA procedure",

author = "Nguyen, {Chi T.Q.} and Nguyen, {Duc Minh} and H.T. Vu and Houwman, {Evert Pieter} and Vu, {Hung N.} and A.J.H.M. Rijnders",

year = "2017",

doi = "10.1016/j.tsf.2017.06.003",

language = "English",

volume = "636",

pages = "188--192",

journal = "Thin solid films",

issn = "0040-6090",

publisher = "Elsevier B.V.",

}

TY - JOUR

T1 - High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors

AU - Nguyen, Chi T.Q.

AU - Nguyen, Duc Minh

AU - Vu, H.T.

AU - Houwman, Evert Pieter

AU - Vu, Hung N.

AU - Rijnders, A.J.H.M.

PY - 2017

Y1 - 2017

N2 - Relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films have been epitaxially grown via pulsed laser deposition on SrRuO3/SrTiO3 single crystal with different orientations. The high recoverable energy-storage density and energy-storage efficiency in the epitaxial PLZT thin films are mainly caused by the coexistence of relaxor and antiferroelectric-like behaviors. The recoverable energy-storage density of 12.03, 12.51 and 12.74 J/cm3 and energy-storage efficiency of 86.50, 88.14 and 88.44%, respectively, for the PLZT(001), PLZT(011) and PLZT(111) thin films measured at 1000 kV/cm. The high energy density and high efficiency indicate that the relaxor epitaxial PLZT(111) thin film is a promising candidate for high pulsed power capacitors.

AB - Relaxor ferroelectric Pb0.9La0.1(Zr0.52Ti0.48)O3 (PLZT) thin films have been epitaxially grown via pulsed laser deposition on SrRuO3/SrTiO3 single crystal with different orientations. The high recoverable energy-storage density and energy-storage efficiency in the epitaxial PLZT thin films are mainly caused by the coexistence of relaxor and antiferroelectric-like behaviors. The recoverable energy-storage density of 12.03, 12.51 and 12.74 J/cm3 and energy-storage efficiency of 86.50, 88.14 and 88.44%, respectively, for the PLZT(001), PLZT(011) and PLZT(111) thin films measured at 1000 kV/cm. The high energy density and high efficiency indicate that the relaxor epitaxial PLZT(111) thin film is a promising candidate for high pulsed power capacitors.

KW - 22/4 OA procedure

U2 - 10.1016/j.tsf.2017.06.003

DO - 10.1016/j.tsf.2017.06.003

M3 - Article

SN - 0040-6090

VL - 636

SP - 188

EP - 192

JO - Thin solid films

JF - Thin solid films

ER -

High energy storage responses in all-oxide epitaxial relaxor ferroelectric thin films with the coexistence of relaxor and antiferroelectric-like behaviors

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