High External Quantum Efficiency of the Lateral P-I-N Diodes Realized of Silicon On Insulator (SOI) Material

T. Hoang, P. Le Minh, J. Holleman, Jurriaan Schmitz, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of Semiconductor Advances for Future Electronics SAFE 2003
    Pages610-613
    Number of pages4
    Publication statusPublished - 25 Nov 2003

    Keywords

    • METIS-213268

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