High External Quantum Efficiency of the Lateral P-I-N Diodes Realized of Silicon On Insulator (SOI) Material

T. Hoang, P. Le Minh, J. Holleman, Jurriaan Schmitz, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	Undefined
Title of host publication	Proceedings of Semiconductor Advances for Future Electronics SAFE 2003
Pages	610-613
Number of pages	4
Publication status	Published - 25 Nov 2003

Keywords

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title = "High External Quantum Efficiency of the Lateral P-I-N Diodes Realized of Silicon On Insulator (SOI) Material",

keywords = "METIS-213268",

author = "T. Hoang and {Le Minh}, P. and J. Holleman and Jurriaan Schmitz and Hans Wallinga",

year = "2003",

month = nov,

day = "25",

language = "Undefined",

pages = "610--613",

booktitle = "Proceedings of Semiconductor Advances for Future Electronics SAFE 2003",

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TY - GEN

T1 - High External Quantum Efficiency of the Lateral P-I-N Diodes Realized of Silicon On Insulator (SOI) Material

AU - Hoang, T.

AU - Le Minh, P.

AU - Holleman, J.

AU - Schmitz, Jurriaan

AU - Wallinga, Hans

PY - 2003/11/25

Y1 - 2003/11/25

KW - METIS-213268

M3 - Conference contribution

SP - 610

EP - 613

BT - Proceedings of Semiconductor Advances for Future Electronics SAFE 2003

ER -