High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material

T. Hoang; P. Le Minh; J. Holleman; Jurriaan Schmitz; Hans Wallinga

High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material

T. Hoang, P. Le Minh, J. Holleman, Jurriaan Schmitz, Hans Wallinga

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Abstract

The infrared light emission of the lateral P-I-N diodes fabricated on SIMOX SOI (Separation by Implanted OXygen Silicon On Insulator) substrates show a high external quantum efficiency of around 0.025 to 0.1 %. The isolation of the thin silicon sheet (called device layer) from the buried oxide layer is very appropriate for that purpose. In this paper, the devi ce fabrication process, working principle and properties as well as possible applications will be discussed. The electrical and optical characteristics of the device with different active region lengths were measured. The SOI devices with very thin active region (<10nm) were manufactured by thinning the SOI layer by oxidation. These devices show wider emission spectra compared to that of unthinned samples. This device poses a potential integration of an all silicon on-chip optical interconnection scheme with light emitter, wave -guide and detector.

Original language	Undefined
Pages	610-613
Number of pages	4
Publication status	Published - 25 Nov 2003
Event	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003 - Veldhoven, Netherlands Duration: 25 Nov 2003 → 26 Nov 2003 Conference number: 6

Conference

Conference	6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	25/11/03 → 26/11/03

Keywords

EWI-15563
IR-67740
SC-SBLE: Silicon-based Light Emitters

Access to Document

http://eprints.eemcs.utwente.nl/secure2/15563/01/hoang.pdf

Cite this

Hoang, T., Le Minh, P., Holleman, J., Schmitz, J., & Wallinga, H. (2003). High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material. 610-613. Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands. http://eprints.eemcs.utwente.nl/secure2/15563/01/hoang.pdf

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abstract = "The infrared light emission of the lateral P-I-N diodes fabricated on SIMOX SOI (Separation by Implanted OXygen Silicon On Insulator) substrates show a high external quantum efficiency of around 0.025 to 0.1 %. The isolation of the thin silicon sheet (called device layer) from the buried oxide layer is very appropriate for that purpose. In this paper, the devi ce fabrication process, working principle and properties as well as possible applications will be discussed. The electrical and optical characteristics of the device with different active region lengths were measured. The SOI devices with very thin active region (<10nm) were manufactured by thinning the SOI layer by oxidation. These devices show wider emission spectra compared to that of unthinned samples. This device poses a potential integration of an all silicon on-chip optical interconnection scheme with light emitter, wave -guide and detector.",

keywords = "EWI-15563, IR-67740, SC-SBLE: Silicon-based Light Emitters",

author = "T. Hoang and {Le Minh}, P. and J. Holleman and Jurriaan Schmitz and Hans Wallinga",

year = "2003",

month = nov,

day = "25",

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pages = "610--613",

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Hoang, T, Le Minh, P, Holleman, J, Schmitz, J & Wallinga, H 2003, 'High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material', Paper presented at 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003, Veldhoven, Netherlands, 25/11/03 - 26/11/03 pp. 610-613. <http://eprints.eemcs.utwente.nl/secure2/15563/01/hoang.pdf>

TY - CONF

T1 - High external quantum efficiency of the lateral P-I-N diodes realized of silicon on insulator (SOI) material

AU - Hoang, T.

AU - Le Minh, P.

AU - Holleman, J.

AU - Schmitz, Jurriaan

AU - Wallinga, Hans

N1 - Conference code: 6

PY - 2003/11/25

Y1 - 2003/11/25

N2 - The infrared light emission of the lateral P-I-N diodes fabricated on SIMOX SOI (Separation by Implanted OXygen Silicon On Insulator) substrates show a high external quantum efficiency of around 0.025 to 0.1 %. The isolation of the thin silicon sheet (called device layer) from the buried oxide layer is very appropriate for that purpose. In this paper, the devi ce fabrication process, working principle and properties as well as possible applications will be discussed. The electrical and optical characteristics of the device with different active region lengths were measured. The SOI devices with very thin active region (<10nm) were manufactured by thinning the SOI layer by oxidation. These devices show wider emission spectra compared to that of unthinned samples. This device poses a potential integration of an all silicon on-chip optical interconnection scheme with light emitter, wave -guide and detector.

AB - The infrared light emission of the lateral P-I-N diodes fabricated on SIMOX SOI (Separation by Implanted OXygen Silicon On Insulator) substrates show a high external quantum efficiency of around 0.025 to 0.1 %. The isolation of the thin silicon sheet (called device layer) from the buried oxide layer is very appropriate for that purpose. In this paper, the devi ce fabrication process, working principle and properties as well as possible applications will be discussed. The electrical and optical characteristics of the device with different active region lengths were measured. The SOI devices with very thin active region (<10nm) were manufactured by thinning the SOI layer by oxidation. These devices show wider emission spectra compared to that of unthinned samples. This device poses a potential integration of an all silicon on-chip optical interconnection scheme with light emitter, wave -guide and detector.

KW - EWI-15563

KW - IR-67740

KW - SC-SBLE: Silicon-based Light Emitters

M3 - Paper

SP - 610

EP - 613

T2 - 6th Annual Workshop on Semiconductor Advances for Future Electronics and Sensors, SAFE 2003

Y2 - 25 November 2003 through 26 November 2003

ER -