High force 10 kN piezoresistive silicon force sensor with output independent of force distribution

A.F. Zwijze, Remco J. Wiegerink, Gijsbertus J.M. Krijnen, Johan W. Berenschot, Meint J. de Boer, Michael Curt Elwenspoek

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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    Abstract

    A 10 kN silicon force sensor is realized in which the force is measured by compressing a meander shaped polysilicon strain gage. A second gage which is not loaded, is used for temperature compensation, for compensation of bending and stretching stresses in the chip and for common changes in zero load resistor values. It is shown that the output of the bridge is a linear function of the force and is independent of the force distribution on the chip. By measuring the resistance change along both gages, the force distribution on the chip can be determined so that it can be detected whether the sensor has an oblique load or not. The production process of the chip is simple and robust. A package is designed to apply the load. Hysteresis experiments are performed at four temperatures between 25 °C and 47 °C. Hysteresis measurements at room temperature are in close agreement with finite element calculations. The maximum hysteresis error is within &plusmn0.14% of the full-scale output (fso). Creep was tested by loading it five times. It follows that creep is smaller than 0.01% of the fso. The total error including interpolation error is within &plusmn0.23%.
    Original languageUndefined
    Title of host publicationProceedings of SPIE - The International Society for Optical Engineering
    EditorsEric Peeters, Oliver Paul
    Place of PublicationBellingham, WA, USA
    PublisherSPIE
    Pages47-58
    Number of pages12
    DOIs
    Publication statusPublished - 18 Sep 2000

    Publication series

    NameProceedings of SPIE
    PublisherSPIE
    Volume4176
    ISSN (Print)0277-786X

    Keywords

    • EWI-12919
    • IR-16246
    • METIS-113131

    Cite this

    Zwijze, A. F., Wiegerink, R. J., Krijnen, G. J. M., Berenschot, J. W., de Boer, M. J., & Elwenspoek, M. C. (2000). High force 10 kN piezoresistive silicon force sensor with output independent of force distribution. In E. Peeters, & O. Paul (Eds.), Proceedings of SPIE - The International Society for Optical Engineering (pp. 47-58). (Proceedings of SPIE; Vol. 4176). Bellingham, WA, USA: SPIE. https://doi.org/10.1117/12.395640
    Zwijze, A.F. ; Wiegerink, Remco J. ; Krijnen, Gijsbertus J.M. ; Berenschot, Johan W. ; de Boer, Meint J. ; Elwenspoek, Michael Curt. / High force 10 kN piezoresistive silicon force sensor with output independent of force distribution. Proceedings of SPIE - The International Society for Optical Engineering. editor / Eric Peeters ; Oliver Paul. Bellingham, WA, USA : SPIE, 2000. pp. 47-58 (Proceedings of SPIE).
    @inproceedings{30554fb1567044b7a748225dda2d5688,
    title = "High force 10 kN piezoresistive silicon force sensor with output independent of force distribution",
    abstract = "A 10 kN silicon force sensor is realized in which the force is measured by compressing a meander shaped polysilicon strain gage. A second gage which is not loaded, is used for temperature compensation, for compensation of bending and stretching stresses in the chip and for common changes in zero load resistor values. It is shown that the output of the bridge is a linear function of the force and is independent of the force distribution on the chip. By measuring the resistance change along both gages, the force distribution on the chip can be determined so that it can be detected whether the sensor has an oblique load or not. The production process of the chip is simple and robust. A package is designed to apply the load. Hysteresis experiments are performed at four temperatures between 25 °C and 47 °C. Hysteresis measurements at room temperature are in close agreement with finite element calculations. The maximum hysteresis error is within &plusmn0.14{\%} of the full-scale output (fso). Creep was tested by loading it five times. It follows that creep is smaller than 0.01{\%} of the fso. The total error including interpolation error is within &plusmn0.23{\%}.",
    keywords = "EWI-12919, IR-16246, METIS-113131",
    author = "A.F. Zwijze and Wiegerink, {Remco J.} and Krijnen, {Gijsbertus J.M.} and Berenschot, {Johan W.} and {de Boer}, {Meint J.} and Elwenspoek, {Michael Curt}",
    year = "2000",
    month = "9",
    day = "18",
    doi = "10.1117/12.395640",
    language = "Undefined",
    series = "Proceedings of SPIE",
    publisher = "SPIE",
    pages = "47--58",
    editor = "Eric Peeters and Oliver Paul",
    booktitle = "Proceedings of SPIE - The International Society for Optical Engineering",
    address = "United States",

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    Zwijze, AF, Wiegerink, RJ, Krijnen, GJM, Berenschot, JW, de Boer, MJ & Elwenspoek, MC 2000, High force 10 kN piezoresistive silicon force sensor with output independent of force distribution. in E Peeters & O Paul (eds), Proceedings of SPIE - The International Society for Optical Engineering. Proceedings of SPIE, vol. 4176, SPIE, Bellingham, WA, USA, pp. 47-58. https://doi.org/10.1117/12.395640

    High force 10 kN piezoresistive silicon force sensor with output independent of force distribution. / Zwijze, A.F.; Wiegerink, Remco J.; Krijnen, Gijsbertus J.M.; Berenschot, Johan W.; de Boer, Meint J.; Elwenspoek, Michael Curt.

    Proceedings of SPIE - The International Society for Optical Engineering. ed. / Eric Peeters; Oliver Paul. Bellingham, WA, USA : SPIE, 2000. p. 47-58 (Proceedings of SPIE; Vol. 4176).

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - High force 10 kN piezoresistive silicon force sensor with output independent of force distribution

    AU - Zwijze, A.F.

    AU - Wiegerink, Remco J.

    AU - Krijnen, Gijsbertus J.M.

    AU - Berenschot, Johan W.

    AU - de Boer, Meint J.

    AU - Elwenspoek, Michael Curt

    PY - 2000/9/18

    Y1 - 2000/9/18

    N2 - A 10 kN silicon force sensor is realized in which the force is measured by compressing a meander shaped polysilicon strain gage. A second gage which is not loaded, is used for temperature compensation, for compensation of bending and stretching stresses in the chip and for common changes in zero load resistor values. It is shown that the output of the bridge is a linear function of the force and is independent of the force distribution on the chip. By measuring the resistance change along both gages, the force distribution on the chip can be determined so that it can be detected whether the sensor has an oblique load or not. The production process of the chip is simple and robust. A package is designed to apply the load. Hysteresis experiments are performed at four temperatures between 25 °C and 47 °C. Hysteresis measurements at room temperature are in close agreement with finite element calculations. The maximum hysteresis error is within &plusmn0.14% of the full-scale output (fso). Creep was tested by loading it five times. It follows that creep is smaller than 0.01% of the fso. The total error including interpolation error is within &plusmn0.23%.

    AB - A 10 kN silicon force sensor is realized in which the force is measured by compressing a meander shaped polysilicon strain gage. A second gage which is not loaded, is used for temperature compensation, for compensation of bending and stretching stresses in the chip and for common changes in zero load resistor values. It is shown that the output of the bridge is a linear function of the force and is independent of the force distribution on the chip. By measuring the resistance change along both gages, the force distribution on the chip can be determined so that it can be detected whether the sensor has an oblique load or not. The production process of the chip is simple and robust. A package is designed to apply the load. Hysteresis experiments are performed at four temperatures between 25 °C and 47 °C. Hysteresis measurements at room temperature are in close agreement with finite element calculations. The maximum hysteresis error is within &plusmn0.14% of the full-scale output (fso). Creep was tested by loading it five times. It follows that creep is smaller than 0.01% of the fso. The total error including interpolation error is within &plusmn0.23%.

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    KW - IR-16246

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    DO - 10.1117/12.395640

    M3 - Conference contribution

    T3 - Proceedings of SPIE

    SP - 47

    EP - 58

    BT - Proceedings of SPIE - The International Society for Optical Engineering

    A2 - Peeters, Eric

    A2 - Paul, Oliver

    PB - SPIE

    CY - Bellingham, WA, USA

    ER -

    Zwijze AF, Wiegerink RJ, Krijnen GJM, Berenschot JW, de Boer MJ, Elwenspoek MC. High force 10 kN piezoresistive silicon force sensor with output independent of force distribution. In Peeters E, Paul O, editors, Proceedings of SPIE - The International Society for Optical Engineering. Bellingham, WA, USA: SPIE. 2000. p. 47-58. (Proceedings of SPIE). https://doi.org/10.1117/12.395640