High-frequency acoustic charge transport in GaAs nanowires

S. Büyükköse, A. Hernandez-Minguez, B. Vratzov, C. Somaschini, L. Geelhaar, H. Riechert, Wilfred Gerard van der Wiel, P.V. Santos

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    43 Citations (Scopus)

    Abstract

    The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.
    Original languageUndefined
    Pages (from-to)135204
    Number of pages6
    JournalNanotechnology
    Volume25
    Issue number13
    DOIs
    Publication statusPublished - 4 Apr 2014

    Keywords

    • EWI-25378
    • acoustic charge transport
    • METIS-309697
    • IR-92933
    • GaAs nanowire
    • surface acoustic waves

    Cite this

    Büyükköse, S., Hernandez-Minguez, A., Vratzov, B., Somaschini, C., Geelhaar, L., Riechert, H., ... Santos, P. V. (2014). High-frequency acoustic charge transport in GaAs nanowires. Nanotechnology, 25(13), 135204. https://doi.org/10.1088/0957-4484/25/13/135204