High-frequency acoustic charge transport in GaAs nanowires

S. Büyükköse, A. Hernandez-Minguez, B. Vratzov, C. Somaschini, L. Geelhaar, H. Riechert, W.G. van der Wiel, P.V. Santos

    Research output: Contribution to journalArticleAcademicpeer-review

    55 Citations (Scopus)


    The oscillating piezoelectric fields accompanying surface acoustic waves are able to transport charge carriers in semiconductor heterostructures. Here, we demonstrate high-frequency (above 1 GHz) acoustic charge transport in GaAs-based nanowires deposited on a piezoelectric substrate. The short wavelength of the acoustic modulation, smaller than the length of the nanowire, allows the trapping of photo-generated electrons and holes at the spatially separated energy minima and maxima of conduction and valence bands, respectively, and their transport along the nanowire with a well defined acoustic velocity towards indium-doped recombination centers.
    Original languageEnglish
    Pages (from-to)135204
    Number of pages6
    Issue number13
    Publication statusPublished - 4 Apr 2014


    • Acoustic charge transport
    • GaAs nanowire
    • Surface acoustic waves


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