High-frequency SiGe HBT's with implanted emitters

L.K. Nanver; E.J.G. Goudena; C. Visser; H.W. van Zeijl; J.W. Slotboom

High-frequency SiGe HBT's with implanted emitters

L.K. Nanver^*, E.J.G. Goudena, C. Visser, H.W. van Zeijl, J.W. Slotboom

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

1 Citation (Scopus)

6 Downloads (Pure)

Abstract

A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and f_T= 44 GHz is demonstrated.

Original language	English
Title of host publication	ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
Editors	Massimo Rudan, Giorgio Baccarani
Place of Publication	Piscataway, NJ
Publisher	IEEE
Pages	469-472
Number of pages	4
ISBN (Print)	9782863321966
Publication status	Published - 1 Jan 1996
Externally published	Yes
Event	26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy Duration: 9 Sept 1996 → 11 Sept 1996 Conference number: 26

Conference

Conference	26th European Solid State Device Research Conference, ESSDERC 1996
Abbreviated title	ESSDERC
Country/Territory	Italy
City	Bologna
Period	9/09/96 → 11/09/96

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https://ieeexplore.ieee.org/document/5436189

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@inproceedings{c8736c33ad53496fa2e06c3980b3f480,

title = "High-frequency SiGe HBT's with implanted emitters",

abstract = "A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and fT= 44 GHz is demonstrated.",

author = "L.K. Nanver and E.J.G. Goudena and C. Visser and {van Zeijl}, H.W. and J.W. Slotboom",

year = "1996",

month = jan,

day = "1",

language = "English",

isbn = "9782863321966",

pages = "469--472",

editor = "Massimo Rudan and Giorgio Baccarani",

booktitle = "ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference",

publisher = "IEEE",

address = "United States",

note = "26th European Solid State Device Research Conference, ESSDERC 1996, ESSDERC ; Conference date: 09-09-1996 Through 11-09-1996",

}

Nanver, LK, Goudena, EJG, Visser, C, van Zeijl, HW & Slotboom, JW 1996, High-frequency SiGe HBT's with implanted emitters. in M Rudan & G Baccarani (eds), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference., 5436189, IEEE, Piscataway, NJ, pp. 469-472, 26th European Solid State Device Research Conference, ESSDERC 1996, Bologna, Italy, 9/09/96. <https://ieeexplore.ieee.org/document/5436189>

High-frequency SiGe HBT's with implanted emitters. / Nanver, L.K.; Goudena, E.J.G.; Visser, C. et al.
ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. ed. / Massimo Rudan; Giorgio Baccarani. Piscataway, NJ: IEEE, 1996. p. 469-472 5436189.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High-frequency SiGe HBT's with implanted emitters

AU - Nanver, L.K.

AU - Goudena, E.J.G.

AU - Visser, C.

AU - van Zeijl, H.W.

AU - Slotboom, J.W.

N1 - Conference code: 26

PY - 1996/1/1

Y1 - 1996/1/1

N2 - A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and fT= 44 GHz is demonstrated.

AB - A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and fT= 44 GHz is demonstrated.

UR - http://www.scopus.com/inward/record.url?scp=84920732315&partnerID=8YFLogxK

M3 - Conference contribution

AN - SCOPUS:84920732315

SN - 9782863321966

SP - 469

EP - 472

BT - ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference

A2 - Rudan, Massimo

A2 - Baccarani, Giorgio

PB - IEEE

CY - Piscataway, NJ

T2 - 26th European Solid State Device Research Conference, ESSDERC 1996

Y2 - 9 September 1996 through 11 September 1996

ER -

High-frequency SiGe HBT's with implanted emitters

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