High-frequency SiGe HBT's with implanted emitters

L. K. Nanver, E. J.G. Goudena, C. Visser, H. W. Van Zeijl, J. W. Slotboom

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
2 Downloads (Pure)

Abstract

A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and fT= 44 GHz is demonstrated.

Original languageEnglish
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society Press
Pages469-472
Number of pages4
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
Publication statusPublished - 1 Jan 1996
Externally publishedYes
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: 9 Sep 199611 Sep 1996
Conference number: 26

Conference

Conference26th European Solid State Device Research Conference, ESSDERC 1996
Abbreviated titleESSDERC
CountryItaly
CityBologna
Period9/09/9611/09/96

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Heterojunction bipolar transistors
Boron
Phosphorus

Cite this

Nanver, L. K., Goudena, E. J. G., Visser, C., Van Zeijl, H. W., & Slotboom, J. W. (1996). High-frequency SiGe HBT's with implanted emitters. In M. Rudan, & G. Baccarani (Eds.), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference (pp. 469-472). [5436189] IEEE Computer Society Press.
Nanver, L. K. ; Goudena, E. J.G. ; Visser, C. ; Van Zeijl, H. W. ; Slotboom, J. W. / High-frequency SiGe HBT's with implanted emitters. ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. editor / Massimo Rudan ; Giorgio Baccarani. IEEE Computer Society Press, 1996. pp. 469-472
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abstract = "A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and fT= 44 GHz is demonstrated.",
author = "Nanver, {L. K.} and Goudena, {E. J.G.} and C. Visser and {Van Zeijl}, {H. W.} and Slotboom, {J. W.}",
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language = "English",
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Nanver, LK, Goudena, EJG, Visser, C, Van Zeijl, HW & Slotboom, JW 1996, High-frequency SiGe HBT's with implanted emitters. in M Rudan & G Baccarani (eds), ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference., 5436189, IEEE Computer Society Press, pp. 469-472, 26th European Solid State Device Research Conference, ESSDERC 1996, Bologna, Italy, 9/09/96.

High-frequency SiGe HBT's with implanted emitters. / Nanver, L. K.; Goudena, E. J.G.; Visser, C.; Van Zeijl, H. W.; Slotboom, J. W.

ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. ed. / Massimo Rudan; Giorgio Baccarani. IEEE Computer Society Press, 1996. p. 469-472 5436189.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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T1 - High-frequency SiGe HBT's with implanted emitters

AU - Nanver, L. K.

AU - Goudena, E. J.G.

AU - Visser, C.

AU - Van Zeijl, H. W.

AU - Slotboom, J. W.

PY - 1996/1/1

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N2 - A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and fT= 44 GHz is demonstrated.

AB - A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and fT= 44 GHz is demonstrated.

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M3 - Conference contribution

SN - 9782863321966

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BT - ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference

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A2 - Baccarani, Giorgio

PB - IEEE Computer Society Press

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Nanver LK, Goudena EJG, Visser C, Van Zeijl HW, Slotboom JW. High-frequency SiGe HBT's with implanted emitters. In Rudan M, Baccarani G, editors, ESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference. IEEE Computer Society Press. 1996. p. 469-472. 5436189