High-frequency SiGe HBT's with implanted emitters

L. K. Nanver*, E. J.G. Goudena, C. Visser, H. W. Van Zeijl, J. W. Slotboom

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

1 Citation (Scopus)
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A method is presented by which the implantation damage induced transient enhanced diffusion of boron and phosphorus is used to fabricate high-frequency SiGe HBT's with implanted emitters. A device with 30 nm basewidth and fT= 44 GHz is demonstrated.

Original languageEnglish
Title of host publicationESSDERC 1996 - Proceedings of the 26th European Solid State Device Research Conference
EditorsMassimo Rudan, Giorgio Baccarani
PublisherIEEE Computer Society Press
Number of pages4
ISBN (Electronic)286332196X
ISBN (Print)9782863321966
Publication statusPublished - 1 Jan 1996
Externally publishedYes
Event26th European Solid State Device Research Conference, ESSDERC 1996 - Bologna, Italy
Duration: 9 Sep 199611 Sep 1996
Conference number: 26


Conference26th European Solid State Device Research Conference, ESSDERC 1996
Abbreviated titleESSDERC


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