High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip

Sergio Andrés Vázquez-Córdova, Edward Bernhardi, Kerstin Worhoff, Sonia Maria García Blanco, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.
Original languageEnglish
Title of host publication17th European Conference on Integrated Optics
Place of PublicationNice
PublisherCNRS - University Nice Sophia Antipolis
PagesPaper Tu3aR2
Number of pages2
Publication statusPublished - Jun 2014
Event17th European Conference on Integrated Optics and Technical Exhibition 2014 - Université Nice, Campus Saint Jean d’Angély, Nice, France
Duration: 24 Jun 201427 Jun 2014
Conference number: 17

Publication series

Name
PublisherCNRS - University Nice Sophia Antipolis

Conference

Conference17th European Conference on Integrated Optics and Technical Exhibition 2014
Abbreviated titleECIO 2014
CountryFrance
CityNice
Period24/06/1427/06/14

Fingerprint

high gain
erbium
amplifiers
chips
silicon
light amplifiers
oxide films
aluminum oxides
wafers

Keywords

  • IOMS-APD: Active Photonic Devices
  • EWI-24838
  • METIS-304127
  • IR-91356
  • METIS-309561

Cite this

Vázquez-Córdova, S. A., Bernhardi, E., Worhoff, K., García Blanco, S. M., & Pollnau, M. (2014). High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip. In 17th European Conference on Integrated Optics (pp. Paper Tu3aR2). Nice: CNRS - University Nice Sophia Antipolis.
Vázquez-Córdova, Sergio Andrés ; Bernhardi, Edward ; Worhoff, Kerstin ; García Blanco, Sonia Maria ; Pollnau, Markus. / High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip. 17th European Conference on Integrated Optics. Nice : CNRS - University Nice Sophia Antipolis, 2014. pp. Paper Tu3aR2
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abstract = "We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.",
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author = "V{\'a}zquez-C{\'o}rdova, {Sergio Andr{\'e}s} and Edward Bernhardi and Kerstin Worhoff and {Garc{\'i}a Blanco}, {Sonia Maria} and Markus Pollnau",
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Vázquez-Córdova, SA, Bernhardi, E, Worhoff, K, García Blanco, SM & Pollnau, M 2014, High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip. in 17th European Conference on Integrated Optics. CNRS - University Nice Sophia Antipolis, Nice, pp. Paper Tu3aR2, 17th European Conference on Integrated Optics and Technical Exhibition 2014, Nice, France, 24/06/14.

High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip. / Vázquez-Córdova, Sergio Andrés; Bernhardi, Edward; Worhoff, Kerstin; García Blanco, Sonia Maria; Pollnau, Markus.

17th European Conference on Integrated Optics. Nice : CNRS - University Nice Sophia Antipolis, 2014. p. Paper Tu3aR2.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

TY - GEN

T1 - High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip

AU - Vázquez-Córdova, Sergio Andrés

AU - Bernhardi, Edward

AU - Worhoff, Kerstin

AU - García Blanco, Sonia Maria

AU - Pollnau, Markus

N1 - eemcs-eprint-24838

PY - 2014/6

Y1 - 2014/6

N2 - We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.

AB - We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.

KW - IOMS-APD: Active Photonic Devices

KW - EWI-24838

KW - METIS-304127

KW - IR-91356

KW - METIS-309561

M3 - Conference contribution

SP - Paper Tu3aR2

BT - 17th European Conference on Integrated Optics

PB - CNRS - University Nice Sophia Antipolis

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Vázquez-Córdova SA, Bernhardi E, Worhoff K, García Blanco SM, Pollnau M. High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip. In 17th European Conference on Integrated Optics. Nice: CNRS - University Nice Sophia Antipolis. 2014. p. Paper Tu3aR2