High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip

Sergio Andrés Vázquez-Córdova, Edward Bernhardi, Kerstin Worhoff, Sonia Maria García Blanco, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademic

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Abstract

We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.
Original languageEnglish
Title of host publication17th European Conference on Integrated Optics
Place of PublicationNice
PublisherCNRS - University Nice Sophia Antipolis
PagesPaper Tu3aR2
Number of pages2
Publication statusPublished - Jun 2014
Event17th European Conference on Integrated Optics and Technical Exhibition 2014 - Université Nice, Campus Saint Jean d’Angély, Nice, France
Duration: 24 Jun 201427 Jun 2014
Conference number: 17

Publication series

Name
PublisherCNRS - University Nice Sophia Antipolis

Conference

Conference17th European Conference on Integrated Optics and Technical Exhibition 2014
Abbreviated titleECIO 2014
CountryFrance
CityNice
Period24/06/1427/06/14

Keywords

  • IOMS-APD: Active Photonic Devices
  • EWI-24838
  • METIS-304127
  • IR-91356
  • METIS-309561

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    Vázquez-Córdova, S. A., Bernhardi, E., Worhoff, K., García Blanco, S. M., & Pollnau, M. (2014). High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip. In 17th European Conference on Integrated Optics (pp. Paper Tu3aR2). Nice: CNRS - University Nice Sophia Antipolis.