High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip

Sergio Andrés Vázquez-Córdova; Edward Bernhardi; Kerstin Worhoff; Sonia Maria García Blanco; Markus Pollnau

High-gain spiral amplifiers in a-Al₂O₃:Er on a silicon chip

Sergio Andrés Vázquez-Córdova, Edward Bernhardi, Kerstin Worhoff, Sonia Maria García Blanco, Markus Pollnau

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic

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Abstract

We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.

Original language	English
Title of host publication	17th European Conference on Integrated Optics
Place of Publication	Nice
Publisher	CNRS - University Nice Sophia Antipolis
Pages	Paper Tu3aR2
Number of pages	2
Publication status	Published - Jun 2014
Event	17th European Conference on Integrated Optics and Technical Exhibition 2014 - Université Nice, Campus Saint Jean d’Angély, Nice, France Duration: 24 Jun 2014 → 27 Jun 2014 Conference number: 17

Publication series

Name
Publisher	CNRS - University Nice Sophia Antipolis

Conference

Conference	17th European Conference on Integrated Optics and Technical Exhibition 2014
Abbreviated title	ECIO 2014
Country/Territory	France
City	Nice
Period	24/06/14 → 27/06/14

Keywords

IOMS-APD: Active Photonic Devices
EWI-24838
METIS-304127
IR-91356
METIS-309561

Access to Document

high-gainFinal published version, 204 KB

Cite this

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title = "High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip",

abstract = "We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.",

keywords = "IOMS-APD: Active Photonic Devices, EWI-24838, METIS-304127, IR-91356, METIS-309561",

author = "V{\'a}zquez-C{\'o}rdova, {Sergio Andr{\'e}s} and Edward Bernhardi and Kerstin Worhoff and {Garc{\'i}a Blanco}, {Sonia Maria} and Markus Pollnau",

note = "eemcs-eprint-24838 ; 17th European Conference on Integrated Optics and Technical Exhibition 2014, ECIO 2014 ; Conference date: 24-06-2014 Through 27-06-2014",

year = "2014",

month = jun,

language = "English",

publisher = "CNRS - University Nice Sophia Antipolis",

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TY - GEN

T1 - High-gain spiral amplifiers in a-Al2O3:Er on a silicon chip

AU - Vázquez-Córdova, Sergio Andrés

AU - Bernhardi, Edward

AU - Worhoff, Kerstin

AU - García Blanco, Sonia Maria

AU - Pollnau, Markus

N1 - Conference code: 17

PY - 2014/6

Y1 - 2014/6

N2 - We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.

AB - We designed and fabricated integrated optical amplifiers with 20 dB of gain at λ = 1532 nm. Aluminum-oxide films with erbium concentrations of 0.45−3.1×10^20 cm^-3 were deposited onto thermally oxidized silicon wafers and microstructured. For a 24.5-cm-long spiral-shaped amplifier with an erbium concentration of 0.95×10^20 cm^-3, a maximum internal net gain of ~20 dB was measured.

KW - IOMS-APD: Active Photonic Devices

KW - EWI-24838

KW - METIS-304127

KW - IR-91356

KW - METIS-309561

M3 - Conference contribution

SP - Paper Tu3aR2

BT - 17th European Conference on Integrated Optics

PB - CNRS - University Nice Sophia Antipolis

CY - Nice

T2 - 17th European Conference on Integrated Optics and Technical Exhibition 2014

Y2 - 24 June 2014 through 27 June 2014

ER -