Abstract
Rare-earth-ion doped potassium double tungstate [KY(WO4)2] waveguide amplifiers are of interest due to high-gain amplification at high-bit rates with low noise figure. The fabrication of such waveguide amplifiers is conventionally based on overgrowing an active layer on a host KY(WO4)2 crystalline material. These devices exhibit low refractive index contrast, typically <0.02, consequently requiring large optical pump power to invert the active material. In this work, we have successfully demonstrated heterogeneous integration of KY(WO4)2 (n ≈ 2) with a silicon dioxide (n ≈ 1.44) carrier.
Focused ion beam milling was used to fabricate high-index-contrast waveguides, permitting the realization of efficient amplifiers when doped with rare-earth-ions.
Original language | English |
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Title of host publication | Proceedings of the 19th Annual Symposium of the IEEE Photonics Society Benelux Chapter |
Subtitle of host publication | 2-4 November 2014, Enschede |
Publisher | IEEE |
Pages | 23-26 |
ISBN (Print) | 978-90-365-3778-0 |
Publication status | Published - 3 Nov 2014 |
Event | 19th Annual Symposium of the IEEE Photonics Benelux Chapter 2014 - University of Twente, Enschede, Netherlands Duration: 3 Nov 2014 → 4 Nov 2014 Conference number: 19 http://www.photonics-benelux.org/symp14/ |
Conference
Conference | 19th Annual Symposium of the IEEE Photonics Benelux Chapter 2014 |
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Country/Territory | Netherlands |
City | Enschede |
Period | 3/11/14 → 4/11/14 |
Internet address |