High-index-contrast potassium double tungstate waveguides enabled by heterogeneous integration

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Abstract

Rare-earth-ion doped potassium double tungstate [KY(WO4)2] waveguide amplifiers are of interest due to high-gain amplification at high-bit rates with low noise figure. The fabrication of such waveguide amplifiers is conventionally based on overgrowing an active layer on a host KY(WO4)2 crystalline material. These devices exhibit low refractive index contrast, typically <0.02, consequently requiring large optical pump power to invert the active material. In this work, we have successfully demonstrated heterogeneous integration of KY(WO4)2 (n ≈ 2) with a silicon dioxide (n ≈ 1.44) carrier. Focused ion beam milling was used to fabricate high-index-contrast waveguides, permitting the realization of efficient amplifiers when doped with rare-earth-ions.
Original languageEnglish
Title of host publicationProceedings of the 19th Annual Symposium of the IEEE Photonics Society Benelux Chapter
PublisherIEEE Photonics Society
Pages23-26
ISBN (Print)978-90-365-3778-0
Publication statusPublished - 3 Nov 2014
Event19th Annual Symposium of the IEEE Photonics Benelux Chapter 2014 - University of Twente, Enschede, Netherlands
Duration: 3 Nov 20144 Nov 2014
Conference number: 19
http://www.photonics-benelux.org/symp14/

Publication series

Name
PublisherIEEE Photonics Society

Conference

Conference19th Annual Symposium of the IEEE Photonics Benelux Chapter 2014
CountryNetherlands
CityEnschede
Period3/11/144/11/14
Internet address

Fingerprint

tungstates
potassium
amplifiers
waveguides
rare earth elements
high gain
low noise
ions
ion beams
refractivity
pumps
silicon dioxide
fabrication

Keywords

  • IR-94961
  • METIS-306414

Cite this

Sefünç, M., Segerink, F. B., & García Blanco, S. M. (2014). High-index-contrast potassium double tungstate waveguides enabled by heterogeneous integration. In Proceedings of the 19th Annual Symposium of the IEEE Photonics Society Benelux Chapter (pp. 23-26). IEEE Photonics Society.
Sefünç, Mustafa ; Segerink, Franciscus B. ; García Blanco, Sonia Maria. / High-index-contrast potassium double tungstate waveguides enabled by heterogeneous integration. Proceedings of the 19th Annual Symposium of the IEEE Photonics Society Benelux Chapter. IEEE Photonics Society, 2014. pp. 23-26
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abstract = "Rare-earth-ion doped potassium double tungstate [KY(WO4)2] waveguide amplifiers are of interest due to high-gain amplification at high-bit rates with low noise figure. The fabrication of such waveguide amplifiers is conventionally based on overgrowing an active layer on a host KY(WO4)2 crystalline material. These devices exhibit low refractive index contrast, typically <0.02, consequently requiring large optical pump power to invert the active material. In this work, we have successfully demonstrated heterogeneous integration of KY(WO4)2 (n ≈ 2) with a silicon dioxide (n ≈ 1.44) carrier. Focused ion beam milling was used to fabricate high-index-contrast waveguides, permitting the realization of efficient amplifiers when doped with rare-earth-ions.",
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Sefünç, M, Segerink, FB & García Blanco, SM 2014, High-index-contrast potassium double tungstate waveguides enabled by heterogeneous integration. in Proceedings of the 19th Annual Symposium of the IEEE Photonics Society Benelux Chapter. IEEE Photonics Society, pp. 23-26, 19th Annual Symposium of the IEEE Photonics Benelux Chapter 2014, Enschede, Netherlands, 3/11/14.

High-index-contrast potassium double tungstate waveguides enabled by heterogeneous integration. / Sefünç, Mustafa; Segerink, Franciscus B.; García Blanco, Sonia Maria.

Proceedings of the 19th Annual Symposium of the IEEE Photonics Society Benelux Chapter. IEEE Photonics Society, 2014. p. 23-26.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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N2 - Rare-earth-ion doped potassium double tungstate [KY(WO4)2] waveguide amplifiers are of interest due to high-gain amplification at high-bit rates with low noise figure. The fabrication of such waveguide amplifiers is conventionally based on overgrowing an active layer on a host KY(WO4)2 crystalline material. These devices exhibit low refractive index contrast, typically <0.02, consequently requiring large optical pump power to invert the active material. In this work, we have successfully demonstrated heterogeneous integration of KY(WO4)2 (n ≈ 2) with a silicon dioxide (n ≈ 1.44) carrier. Focused ion beam milling was used to fabricate high-index-contrast waveguides, permitting the realization of efficient amplifiers when doped with rare-earth-ions.

AB - Rare-earth-ion doped potassium double tungstate [KY(WO4)2] waveguide amplifiers are of interest due to high-gain amplification at high-bit rates with low noise figure. The fabrication of such waveguide amplifiers is conventionally based on overgrowing an active layer on a host KY(WO4)2 crystalline material. These devices exhibit low refractive index contrast, typically <0.02, consequently requiring large optical pump power to invert the active material. In this work, we have successfully demonstrated heterogeneous integration of KY(WO4)2 (n ≈ 2) with a silicon dioxide (n ≈ 1.44) carrier. Focused ion beam milling was used to fabricate high-index-contrast waveguides, permitting the realization of efficient amplifiers when doped with rare-earth-ions.

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Sefünç M, Segerink FB, García Blanco SM. High-index-contrast potassium double tungstate waveguides enabled by heterogeneous integration. In Proceedings of the 19th Annual Symposium of the IEEE Photonics Society Benelux Chapter. IEEE Photonics Society. 2014. p. 23-26