High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers

Negin Golshani, V. Mohammadi, Siva Ramesh, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

8 Citations (Scopus)

Abstract

Integrated resistors are fabricated by using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon. Sheet resistance values in the 100 kΩ/□ range are reliably and reproducibly realized. The resistors made in this material are linear and display low temperature coefficients of a few hundred ppm/°C and good tolerances.

Original languageEnglish
Title of host publicationESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
PublisherIEEE Computer Society
Pages210-213
Number of pages4
ISBN (Print)9781479906499
DOIs
Publication statusPublished - 1 Jan 2013
Externally publishedYes
Event43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania
Duration: 16 Sep 201320 Sep 2013
Conference number: 43

Conference

Conference43rd European Solid-State Device Research Conference, ESSDERC 2013
Abbreviated titleESSDERC
CountryRomania
CityBucharest
Period16/09/1320/09/13

Fingerprint

Resistors
Boron
Vapors
Sheet resistance
Silicon
Temperature

Cite this

Golshani, N., Mohammadi, V., Ramesh, S., & Nanver, L. K. (2013). High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers. In ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference (pp. 210-213). [6818856] IEEE Computer Society. https://doi.org/10.1109/ESSDERC.2013.6818856
Golshani, Negin ; Mohammadi, V. ; Ramesh, Siva ; Nanver, Lis K. / High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers. ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society, 2013. pp. 210-213
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Golshani, N, Mohammadi, V, Ramesh, S & Nanver, LK 2013, High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers. in ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference., 6818856, IEEE Computer Society, pp. 210-213, 43rd European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, 16/09/13. https://doi.org/10.1109/ESSDERC.2013.6818856

High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers. / Golshani, Negin; Mohammadi, V.; Ramesh, Siva; Nanver, Lis K.

ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society, 2013. p. 210-213 6818856.

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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Golshani N, Mohammadi V, Ramesh S, Nanver LK. High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers. In ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE Computer Society. 2013. p. 210-213. 6818856 https://doi.org/10.1109/ESSDERC.2013.6818856