High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers

Negin Golshani; V. Mohammadi; Siva Ramesh; Lis K. Nanver

doi:10.1109/ESSDERC.2013.6818856

High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers

Negin Golshani, V. Mohammadi, Siva Ramesh, Lis K. Nanver

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

9 Citations (Scopus)

Abstract

Integrated resistors are fabricated by using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon. Sheet resistance values in the 100 kΩ/□ range are reliably and reproducibly realized. The resistors made in this material are linear and display low temperature coefficients of a few hundred ppm/°C and good tolerances.

Original language	English
Title of host publication	ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference
Publisher	IEEE
Pages	210-213
Number of pages	4
ISBN (Print)	9781479906499
DOIs	https://doi.org/10.1109/ESSDERC.2013.6818856
Publication status	Published - 1 Jan 2013
Externally published	Yes
Event	43rd European Solid-State Device Research Conference, ESSDERC 2013 - Bucharest, Romania Duration: 16 Sept 2013 → 20 Sept 2013 Conference number: 43

Conference

Conference	43rd European Solid-State Device Research Conference, ESSDERC 2013
Abbreviated title	ESSDERC
Country/Territory	Romania
City	Bucharest
Period	16/09/13 → 20/09/13

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10.1109/ESSDERC.2013.6818856

Cite this

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title = "High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers",

abstract = "Integrated resistors are fabricated by using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon. Sheet resistance values in the 100 kΩ/□ range are reliably and reproducibly realized. The resistors made in this material are linear and display low temperature coefficients of a few hundred ppm/°C and good tolerances.",

author = "Negin Golshani and V. Mohammadi and Siva Ramesh and Nanver, {Lis K.}",

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Golshani, N, Mohammadi, V, Ramesh, S & Nanver, LK 2013, High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers. in ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference., 6818856, IEEE, pp. 210-213, 43rd European Solid-State Device Research Conference, ESSDERC 2013, Bucharest, Romania, 16/09/13. https://doi.org/10.1109/ESSDERC.2013.6818856

High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers. / Golshani, Negin; Mohammadi, V.; Ramesh, Siva et al.
ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference. IEEE, 2013. p. 210-213 6818856.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers

AU - Golshani, Negin

AU - Mohammadi, V.

AU - Ramesh, Siva

AU - Nanver, Lis K.

N1 - Conference code: 43

PY - 2013/1/1

Y1 - 2013/1/1

N2 - Integrated resistors are fabricated by using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon. Sheet resistance values in the 100 kΩ/□ range are reliably and reproducibly realized. The resistors made in this material are linear and display low temperature coefficients of a few hundred ppm/°C and good tolerances.

AB - Integrated resistors are fabricated by using pure boron (PureB) depositions to create a p-type conductive layer on n-type silicon. Sheet resistance values in the 100 kΩ/□ range are reliably and reproducibly realized. The resistors made in this material are linear and display low temperature coefficients of a few hundred ppm/°C and good tolerances.

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SN - 9781479906499

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BT - ESSDERC 2013 - Proceedings of the 43rd European Solid-State Device Research Conference

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ER -

High-ohmic resistors using nanometer-thin pure-boron chemical-vapour- deposited layers

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