High performance Fin-FET electrochemical sensor with high-k dielectric materials

Serena Rollo, Dipti Rani, Wouter Olthuis, César Pascual García

Research output: Contribution to journalArticleAcademicpeer-review

Abstract

In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and thus a better signal to noise ratio), increased dynamic range and chemical stability. We used pH sensing to verify the design. We explored the sensitivity and linearity of the response of silicon dioxide, alumina and hafnium oxide as dielectric materials sensing pH, and compared their chemical stability in different acids. The high aspect ratio fin geometry of the sensor provides high currents, as well as a planar conduction channel more reliable than traditional silicon nanowires. The hafnium oxide Fin-FET configuration performed the best delivering the most linear response both for the output and transfer characteristics, providing a wider dynamic range. Hafnium oxide also showed the best chemical stability. Thus we believe that the developed high aspect ratio Fin-FETs/high-k dielectric system can offer the best compromise of performance of FET-based sensors.

Original languageEnglish
Article number127215
JournalSensors and Actuators, B: Chemical
Volume303
Early online date9 Oct 2019
DOIs
Publication statusE-pub ahead of print/First online - 9 Oct 2019

Fingerprint

Electrochemical sensors
fins
Field effect transistors
Hafnium oxides
hafnium oxides
field effect transistors
Chemical stability
sensors
Aspect ratio
high aspect ratio
dynamic range
oxides
Aluminum Oxide
Sensors
Transconductance
Silicon
transconductance
Silicon Dioxide
Nanowires
linearity

Keywords

  • UT-Hybrid-D
  • FET
  • High-k dielectrics
  • Transconductance
  • Electrochemical sensing

Cite this

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title = "High performance Fin-FET electrochemical sensor with high-k dielectric materials",
abstract = "In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and thus a better signal to noise ratio), increased dynamic range and chemical stability. We used pH sensing to verify the design. We explored the sensitivity and linearity of the response of silicon dioxide, alumina and hafnium oxide as dielectric materials sensing pH, and compared their chemical stability in different acids. The high aspect ratio fin geometry of the sensor provides high currents, as well as a planar conduction channel more reliable than traditional silicon nanowires. The hafnium oxide Fin-FET configuration performed the best delivering the most linear response both for the output and transfer characteristics, providing a wider dynamic range. Hafnium oxide also showed the best chemical stability. Thus we believe that the developed high aspect ratio Fin-FETs/high-k dielectric system can offer the best compromise of performance of FET-based sensors.",
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High performance Fin-FET electrochemical sensor with high-k dielectric materials. / Rollo, Serena; Rani, Dipti; Olthuis, Wouter; Pascual García, César.

In: Sensors and Actuators, B: Chemical, Vol. 303, 127215, 15.01.2020.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - High performance Fin-FET electrochemical sensor with high-k dielectric materials

AU - Rollo, Serena

AU - Rani, Dipti

AU - Olthuis, Wouter

AU - Pascual García, César

N1 - Elsevier deal

PY - 2019/10/9

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AB - In this work we combine a Fin Field Effect Transistor (Fin-FET) characterised by a high height to width aspect ratio with high-k dielectric materials to study the optimized design for chemical-FETs to provide higher transconductance (and thus a better signal to noise ratio), increased dynamic range and chemical stability. We used pH sensing to verify the design. We explored the sensitivity and linearity of the response of silicon dioxide, alumina and hafnium oxide as dielectric materials sensing pH, and compared their chemical stability in different acids. The high aspect ratio fin geometry of the sensor provides high currents, as well as a planar conduction channel more reliable than traditional silicon nanowires. The hafnium oxide Fin-FET configuration performed the best delivering the most linear response both for the output and transfer characteristics, providing a wider dynamic range. Hafnium oxide also showed the best chemical stability. Thus we believe that the developed high aspect ratio Fin-FETs/high-k dielectric system can offer the best compromise of performance of FET-based sensors.

KW - UT-Hybrid-D

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