High performance silicon-based extreme ultraviolet (EUV) radiation detector for industrial application

L. Shi*, F. Sarubbi, S. N. Nihtianov, L. K. Nanver, T. L.M. Scholtes, F. Scholze

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

20 Citations (Scopus)

Abstract

Silicon-based p+n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p+ active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and extremely ultra shallow junctions that significantly enhance the sensitivity to UV radiation with respect to commercial state-of-the-art detectors, as confirmed by near theoretical responsivity (0.266 A/W, at 13.5 nm radiation wavelength). Outstanding performance has also been achieved in terms of extremely low dark current (< 50 pA, at a reverse bias of 10 V) and pulsed response time (< 100 ns) for 0.1 cm2 large area devices. In addition, the fabricated photodiodes exhibit negligible degradation to high-dose radiation exposure. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity, and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in industrial applications based on EUV radiation, such as next-generation 13.5 nm wavelength lithography.

Original languageEnglish
Title of host publication2009 35th Annual Conference of IEEE Industrial Electronics
Pages1877-1882
Number of pages6
ISBN (Electronic)978-1-4244-4650-6
DOIs
Publication statusPublished - 1 Dec 2009
Externally publishedYes
Event35th Annual Conference of the IEEE Industrial Electronics Society, IECON 2009 - Alfandega Congress Center, Porto, Portugal
Duration: 3 Nov 20095 Nov 2009
Conference number: 35

Conference

Conference35th Annual Conference of the IEEE Industrial Electronics Society, IECON 2009
Abbreviated titleIECON 2009
CountryPortugal
CityPorto
Period3/11/095/11/09

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Keywords

  • Dark current
  • Extreme-ultraviolet (EUV) radiation
  • Photodiodes
  • Radiation detectors
  • Response time
  • Responsivity
  • Ultrashallow junctions

Cite this

Shi, L., Sarubbi, F., Nihtianov, S. N., Nanver, L. K., Scholtes, T. L. M., & Scholze, F. (2009). High performance silicon-based extreme ultraviolet (EUV) radiation detector for industrial application. In 2009 35th Annual Conference of IEEE Industrial Electronics (pp. 1877-1882) https://doi.org/10.1109/IECON.2009.5414855