Abstract
Silicon-based p+n junction photodiodes have been successfully fabricated for radiation detection in the extreme ultraviolet (EUV) spectral range. The diode technology relies on the formation of a front p+ active surface region by using pure boron chemical vapor deposition (CVD), which grows delta-like B-doped layers on Si substrates. Therefore, the technique can ensure defect-free, highly-doped, and extremely ultra shallow junctions that significantly enhance the sensitivity to UV radiation with respect to commercial state-of-the-art detectors, as confirmed by near theoretical responsivity (0.266 A/W, at 13.5 nm radiation wavelength). Outstanding performance has also been achieved in terms of extremely low dark current (< 50 pA, at a reverse bias of 10 V) and pulsed response time (< 100 ns) for 0.1 cm2 large area devices. In addition, the fabricated photodiodes exhibit negligible degradation to high-dose radiation exposure. Owing to these features, the presented photodiode technology, which profits from low cost, reduced complexity, and full compatibility with standard Si processing, offers a reliable solution for the implementation of detectors in industrial applications based on EUV radiation, such as next-generation 13.5 nm wavelength lithography.
Original language | English |
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Title of host publication | 2009 35th Annual Conference of IEEE Industrial Electronics |
Pages | 1877-1882 |
Number of pages | 6 |
ISBN (Electronic) | 978-1-4244-4650-6 |
DOIs | |
Publication status | Published - 1 Dec 2009 |
Externally published | Yes |
Event | 35th Annual Conference of the IEEE Industrial Electronics Society, IECON 2009 - Alfandega Congress Center, Porto, Portugal Duration: 3 Nov 2009 → 5 Nov 2009 Conference number: 35 |
Conference
Conference | 35th Annual Conference of the IEEE Industrial Electronics Society, IECON 2009 |
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Abbreviated title | IECON 2009 |
Country/Territory | Portugal |
City | Porto |
Period | 3/11/09 → 5/11/09 |
Keywords
- Dark current
- Extreme-ultraviolet (EUV) radiation
- Photodiodes
- Radiation detectors
- Response time
- Responsivity
- Ultrashallow junctions