High-performance Silicon-On-Glass VDMOS transistor for RF-power applications

N. Nenadovíc; V. Cuoco; M.P. van der Heijden; L.K. Nanver; J.W. Slotboom; S J.C.H. Theeuwen; H.F.F. Jos

doi:10.1109/ESSDERC.2002.194948

High-performance Silicon-On-Glass VDMOS transistor for RF-power applications

N. Nenadovíc^*, V. Cuoco, M.P. van der Heijden, L.K. Nanver, J.W. Slotboom, S J.C.H. Theeuwen, H.F.F. Jos

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

8 Citations (Scopus)

Abstract

A complete analysis of DC and RF performance of a novel SOI vertical DMOS transistor on glass and a conventional LDMOS transistor for RF power applications is presented. The analysis is based on MEDICI device simulations and the "Smoothie" database model for FET devices. An SOI VDMOST on glass with a breakdown of 115V, a specific on-resistance R_ONSP of 3mωcm², an f_Tmax of 7.4 GHz at V_DS=26V and a saturation current of 1.25 10^-4 A/μm at V_DS=10V is demonstrated. A device with 1mm long gate has PAE of 43% and power gain of 18.5 dB with 1dB compression point at POUT =26dBm. Since this SOI VDMOS device shows better linearity and higher power gain compared to conventional LDMOST, it would be the device of choice for RF power applications. Moreover, silicon-on-glass technology offers integration with high quality passives and the possibility to electroplate copper heat sinks only a few microns away from the active device area. Both features are very important for development of integrated power amplifiers.

Original language	English
Title of host publication	32nd European Solid-State Device Research Conference 2002
Editors	Elena Gnani, Giorgio Baccarani, Massimo Rudan
Publisher	IEEE Computer Society Press
Pages	379-382
Number of pages	4
ISBN (Electronic)	8890084782
DOIs	https://doi.org/10.1109/ESSDERC.2002.194948
Publication status	Published - 1 Jan 2005
Externally published	Yes
Event	32nd European Solid-State Device Research Conference, ESSDERC 2002 - Firenze, Italy Duration: 24 Sep 2002 → 26 Sep 2002 Conference number: 32

Conference

Conference	32nd European Solid-State Device Research Conference, ESSDERC 2002
Abbreviated title	ESSDERC
Country/Territory	Italy
City	Firenze
Period	24/09/02 → 26/09/02

Access to Document

10.1109/ESSDERC.2002.194948

Cite this

Nenadovíc, N., Cuoco, V., van der Heijden, M. P., Nanver, L. K., Slotboom, J. W., Theeuwen, S. J. C. H., & Jos, H. F. F. (2005). High-performance Silicon-On-Glass VDMOS transistor for RF-power applications. In E. Gnani, G. Baccarani, & M. Rudan (Eds.), 32nd European Solid-State Device Research Conference 2002 (pp. 379-382). IEEE Computer Society Press. https://doi.org/10.1109/ESSDERC.2002.194948

@inproceedings{f0fa6a373075499f8c487c3a78340f3e,

title = "High-performance Silicon-On-Glass VDMOS transistor for RF-power applications",

abstract = "A complete analysis of DC and RF performance of a novel SOI vertical DMOS transistor on glass and a conventional LDMOS transistor for RF power applications is presented. The analysis is based on MEDICI device simulations and the {"}Smoothie{"} database model for FET devices. An SOI VDMOST on glass with a breakdown of 115V, a specific on-resistance RONSP of 3mωcm2, an fTmax of 7.4 GHz at VDS=26V and a saturation current of 1.25 10-4 A/μm at VDS=10V is demonstrated. A device with 1mm long gate has PAE of 43% and power gain of 18.5 dB with 1dB compression point at POUT =26dBm. Since this SOI VDMOS device shows better linearity and higher power gain compared to conventional LDMOST, it would be the device of choice for RF power applications. Moreover, silicon-on-glass technology offers integration with high quality passives and the possibility to electroplate copper heat sinks only a few microns away from the active device area. Both features are very important for development of integrated power amplifiers.",

author = "N. Nenadov{\'i}c and V. Cuoco and {van der Heijden}, M.P. and L.K. Nanver and J.W. Slotboom and Theeuwen, {S J.C.H.} and H.F.F. Jos",

year = "2005",

month = jan,

day = "1",

doi = "10.1109/ESSDERC.2002.194948",

language = "English",

pages = "379--382",

editor = "Elena Gnani and Giorgio Baccarani and Massimo Rudan",

booktitle = "32nd European Solid-State Device Research Conference 2002",

publisher = "IEEE Computer Society Press",

note = "32nd European Solid-State Device Research Conference, ESSDERC 2002, ESSDERC ; Conference date: 24-09-2002 Through 26-09-2002",

}

Nenadovíc, N, Cuoco, V, van der Heijden, MP, Nanver, LK, Slotboom, JW, Theeuwen, SJCH & Jos, HFF 2005, High-performance Silicon-On-Glass VDMOS transistor for RF-power applications. in E Gnani, G Baccarani & M Rudan (eds), 32nd European Solid-State Device Research Conference 2002. IEEE Computer Society Press, pp. 379-382, 32nd European Solid-State Device Research Conference, ESSDERC 2002, Firenze, Italy, 24/09/02. https://doi.org/10.1109/ESSDERC.2002.194948

High-performance Silicon-On-Glass VDMOS transistor for RF-power applications. / Nenadovíc, N.; Cuoco, V.; van der Heijden, M.P. et al.

32nd European Solid-State Device Research Conference 2002. ed. / Elena Gnani; Giorgio Baccarani; Massimo Rudan. IEEE Computer Society Press, 2005. p. 379-382.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High-performance Silicon-On-Glass VDMOS transistor for RF-power applications

AU - Nenadovíc, N.

AU - Cuoco, V.

AU - van der Heijden, M.P.

AU - Nanver, L.K.

AU - Slotboom, J.W.

AU - Theeuwen, S J.C.H.

AU - Jos, H.F.F.

N1 - Conference code: 32

PY - 2005/1/1

Y1 - 2005/1/1

N2 - A complete analysis of DC and RF performance of a novel SOI vertical DMOS transistor on glass and a conventional LDMOS transistor for RF power applications is presented. The analysis is based on MEDICI device simulations and the "Smoothie" database model for FET devices. An SOI VDMOST on glass with a breakdown of 115V, a specific on-resistance RONSP of 3mωcm2, an fTmax of 7.4 GHz at VDS=26V and a saturation current of 1.25 10-4 A/μm at VDS=10V is demonstrated. A device with 1mm long gate has PAE of 43% and power gain of 18.5 dB with 1dB compression point at POUT =26dBm. Since this SOI VDMOS device shows better linearity and higher power gain compared to conventional LDMOST, it would be the device of choice for RF power applications. Moreover, silicon-on-glass technology offers integration with high quality passives and the possibility to electroplate copper heat sinks only a few microns away from the active device area. Both features are very important for development of integrated power amplifiers.

AB - A complete analysis of DC and RF performance of a novel SOI vertical DMOS transistor on glass and a conventional LDMOS transistor for RF power applications is presented. The analysis is based on MEDICI device simulations and the "Smoothie" database model for FET devices. An SOI VDMOST on glass with a breakdown of 115V, a specific on-resistance RONSP of 3mωcm2, an fTmax of 7.4 GHz at VDS=26V and a saturation current of 1.25 10-4 A/μm at VDS=10V is demonstrated. A device with 1mm long gate has PAE of 43% and power gain of 18.5 dB with 1dB compression point at POUT =26dBm. Since this SOI VDMOS device shows better linearity and higher power gain compared to conventional LDMOST, it would be the device of choice for RF power applications. Moreover, silicon-on-glass technology offers integration with high quality passives and the possibility to electroplate copper heat sinks only a few microns away from the active device area. Both features are very important for development of integrated power amplifiers.

UR - http://www.scopus.com/inward/record.url?scp=84907697138&partnerID=8YFLogxK

U2 - 10.1109/ESSDERC.2002.194948

DO - 10.1109/ESSDERC.2002.194948

M3 - Conference contribution

AN - SCOPUS:84907697138

SP - 379

EP - 382

BT - 32nd European Solid-State Device Research Conference 2002

A2 - Gnani, Elena

A2 - Baccarani, Giorgio

A2 - Rudan, Massimo

PB - IEEE Computer Society Press

T2 - 32nd European Solid-State Device Research Conference, ESSDERC 2002

Y2 - 24 September 2002 through 26 September 2002

ER -

High-performance Silicon-On-Glass VDMOS transistor for RF-power applications

Abstract

Conference

Access to Document

Other files and links

Fingerprint

Cite this