Abstract
High-performance low-loss boron-passivated Schottky varactor diodes have been fabricated in a silicon-on-glass substrate transfer technology, using laser-annealed back-wafer contacts and copper-plated aluminum. The diodes have well-defined doping profiles predetermined by the circuit application and high quality factors ranging typically from 100 till 300 at 2 GHz.
Original language | English |
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Title of host publication | Proceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005. |
Pages | 117-120 |
Number of pages | 4 |
DOIs | |
Publication status | Published - 1 Dec 2005 |
Externally published | Yes |
Event | 35th European Solid-State Device Research Conference, ESSDERC 2005 - Grenoble, France Duration: 12 Sept 2005 → 16 Sept 2005 Conference number: 35 |
Conference
Conference | 35th European Solid-State Device Research Conference, ESSDERC 2005 |
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Abbreviated title | ESSDERC |
Country/Territory | France |
City | Grenoble |
Period | 12/09/05 → 16/09/05 |