High-performance varactor diodes integrated in a silicon-on-glass technology

K. Buisman*, L.K. Nanver, T.L.M. Scholtes, H. Schellevis, L.C.N. de Vreede

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

14 Citations (Scopus)

Abstract

High-performance low-loss boron-passivated Schottky varactor diodes have been fabricated in a silicon-on-glass substrate transfer technology, using laser-annealed back-wafer contacts and copper-plated aluminum. The diodes have well-defined doping profiles predetermined by the circuit application and high quality factors ranging typically from 100 till 300 at 2 GHz.

Original languageEnglish
Title of host publicationProceedings of 35th European Solid-State Device Research Conference, 2005. ESSDERC 2005.
Pages117-120
Number of pages4
DOIs
Publication statusPublished - 1 Dec 2005
Externally publishedYes
Event35th European Solid-State Device Research Conference, ESSDERC 2005 - Grenoble, France
Duration: 12 Sep 200516 Sep 2005
Conference number: 35

Conference

Conference35th European Solid-State Device Research Conference, ESSDERC 2005
Abbreviated titleESSDERC
CountryFrance
CityGrenoble
Period12/09/0516/09/05

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