We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT). Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large crosssectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.
|Title of host publication||2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS)|
|Number of pages||4|
|Publication status||Published - Jan 2019|
|Event||32nd IEEE International Conference on Micro Electro Mechanical Systems 2019 - Seoul, Korea, Republic of|
Duration: 27 Jan 2019 → 31 Jan 2019
Conference number: 32
|Conference||32nd IEEE International Conference on Micro Electro Mechanical Systems 2019|
|Abbreviated title||MEMS 2019|
|Country||Korea, Republic of|
|Period||27/01/19 → 31/01/19|
Veltkamp, H-W., Zhao, Y., de Boer, M. J., Sanders, R. G. P., Wiegerink, R. J., & Lötters, J. C. (2019). High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology. In 2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS) (Vol. 32, pp. 648-651). IEEE.