High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Abstract

    We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT). Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large crosssectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.
    Original languageEnglish
    Title of host publication2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS)
    PublisherIEEE
    Pages648-651
    Number of pages4
    Volume32
    Publication statusPublished - Jan 2019
    Event32nd IEEE International Conference on Micro Electro Mechanical Systems 2019 - Seoul, Korea, Republic of
    Duration: 27 Jan 201931 Jan 2019
    Conference number: 32
    http://www.mems19.org/html/main.php

    Conference

    Conference32nd IEEE International Conference on Micro Electro Mechanical Systems 2019
    Abbreviated titleMEMS 2019
    CountryKorea, Republic of
    CitySeoul
    Period27/01/1931/01/19
    Internet address

    Fingerprint

    fluidics
    heaters
    heating
    silicon
    thermal expansion
    fabrication
    cross sections
    temperature

    Cite this

    Veltkamp, H-W., Zhao, Y., de Boer, M. J., Sanders, R. G. P., Wiegerink, R. J., & Lötters, J. C. (2019). High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology. In 2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS) (Vol. 32, pp. 648-651). IEEE.
    Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J. ; Sanders, Remco G.P. ; Wiegerink, Remco J. ; Lötters, Joost Conrad. / High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology. 2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS). Vol. 32 IEEE, 2019. pp. 648-651
    @inproceedings{d4cb3bd96a7a46478abe4b85cb5fb8d5,
    title = "High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology",
    abstract = "We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT). Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large crosssectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.",
    author = "Henk-Willem Veltkamp and Yiyuan Zhao and {de Boer}, {Meint J.} and Sanders, {Remco G.P.} and Wiegerink, {Remco J.} and L{\"o}tters, {Joost Conrad}",
    year = "2019",
    month = "1",
    language = "English",
    volume = "32",
    pages = "648--651",
    booktitle = "2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS)",
    publisher = "IEEE",
    address = "United States",

    }

    Veltkamp, H-W, Zhao, Y, de Boer, MJ, Sanders, RGP, Wiegerink, RJ & Lötters, JC 2019, High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology. in 2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS). vol. 32, IEEE, pp. 648-651, 32nd IEEE International Conference on Micro Electro Mechanical Systems 2019, Seoul, Korea, Republic of, 27/01/19.

    High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology. / Veltkamp, Henk-Willem ; Zhao, Yiyuan ; de Boer, Meint J.; Sanders, Remco G.P.; Wiegerink, Remco J.; Lötters, Joost Conrad.

    2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS). Vol. 32 IEEE, 2019. p. 648-651.

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    TY - GEN

    T1 - High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology

    AU - Veltkamp, Henk-Willem

    AU - Zhao, Yiyuan

    AU - de Boer, Meint J.

    AU - Sanders, Remco G.P.

    AU - Wiegerink, Remco J.

    AU - Lötters, Joost Conrad

    PY - 2019/1

    Y1 - 2019/1

    N2 - We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT). Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large crosssectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.

    AB - We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT). Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large crosssectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.

    M3 - Conference contribution

    VL - 32

    SP - 648

    EP - 651

    BT - 2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS)

    PB - IEEE

    ER -

    Veltkamp H-W, Zhao Y, de Boer MJ, Sanders RGP, Wiegerink RJ, Lötters JC. High power Si sidewall heaters for fluidic application fabricated by trench-assisted surface channel technology. In 2019 IEEE 32nd Conference on Micro Electro Mechanical Systems (MEMS). Vol. 32. IEEE. 2019. p. 648-651