High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology

Henk Willem Veltkamp; Yiyuan Zhao; Meint J. De Boer; Remco G.P. Sanders; Remco J. Wiegerink; Joost C. Lotters

doi:10.1109/MEMSYS.2019.8870667

High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

3 Citations (Scopus)

138 Downloads (Pure)

Abstract

We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT) [1]. Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large cross-sectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.

Original language	English
Title of host publication	2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019
Publisher	IEEE
Pages	648-651
Number of pages	4
ISBN (Electronic)	978-1-7281-1610-5
ISBN (Print)	978-1-7281-1609-9 (USB), 978-1-7281-1611-2
DOIs	https://doi.org/10.1109/MEMSYS.2019.8870667
Publication status	Published - 17 Oct 2019
Event	32nd IEEE International Conference on Micro Electro Mechanical Systems 2019 - Seoul, Korea, Republic of Duration: 27 Jan 2019 → 31 Jan 2019 Conference number: 32 http://www.mems19.org/html/main.php

Conference

Conference	32nd IEEE International Conference on Micro Electro Mechanical Systems 2019
Abbreviated title	MEMS 2019
Country/Territory	Korea, Republic of
City	Seoul
Period	27/01/19 → 31/01/19
Internet address	http://www.mems19.org/html/main.php

Keywords

22/3 OA procedure

Access to Document

10.1109/MEMSYS.2019.8870667

ArticleFinal published version, 2.55 MBLicence: Taverne

Cite this

Veltkamp, H. W., Zhao, Y., De Boer, M. J., Sanders, R. G. P., Wiegerink, R. J., & Lotters, J. C. (2019). High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology. In 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019 (pp. 648-651). Article 8870667 IEEE. https://doi.org/10.1109/MEMSYS.2019.8870667

@inproceedings{0ce91f08da734e83a0b9f17c0bd11106,

title = "High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology",

abstract = "We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT) [1]. Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large cross-sectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.",

keywords = "22/3 OA procedure",

author = "Veltkamp, \{Henk Willem\} and Yiyuan Zhao and \{De Boer\}, \{Meint J.\} and Sanders, \{Remco G.P.\} and Wiegerink, \{Remco J.\} and Lotters, \{Joost C.\}",

year = "2019",

month = oct,

day = "17",

doi = "10.1109/MEMSYS.2019.8870667",

language = "English",

isbn = "978-1-7281-1609-9 (USB)",

pages = "648--651",

booktitle = "2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019",

publisher = "IEEE",

address = "United States",

note = "32nd IEEE International Conference on Micro Electro Mechanical Systems 2019, MEMS 2019 ; Conference date: 27-01-2019 Through 31-01-2019",

url = "http://www.mems19.org/html/main.php",

}

Veltkamp, HW, Zhao, Y, De Boer, MJ, Sanders, RGP , Wiegerink, RJ & Lotters, JC 2019, High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology. in 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019., 8870667, IEEE, pp. 648-651, 32nd IEEE International Conference on Micro Electro Mechanical Systems 2019, Seoul, Korea, Republic of, 27/01/19. https://doi.org/10.1109/MEMSYS.2019.8870667

High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology. / Veltkamp, Henk Willem; Zhao, Yiyuan; De Boer, Meint J. et al.
2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019. IEEE, 2019. p. 648-651 8870667.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology

AU - Veltkamp, Henk Willem

AU - Zhao, Yiyuan

AU - De Boer, Meint J.

AU - Sanders, Remco G.P.

AU - Wiegerink, Remco J.

AU - Lotters, Joost C.

N1 - Conference code: 32

PY - 2019/10/17

Y1 - 2019/10/17

N2 - We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT) [1]. Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large cross-sectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.

AB - We have fabricated mechanically stable, thermally isolated microfluidic channels with silicon heaters embedded in the sidewalls, using the trench-assisted surface channel technology (TASCT) [1]. Sidewall heating results in an enhanced heating uniformity while allowing high heating powers because of the relatively large cross-sectional area (20 μm by 50 μm) of the silicon heaters. In the proof-of-principle device a maximum temperature of 406 °C was reached at a heating power of 1.4 W, limited by thermal expansion of the channel. The fabrication process enables both the channels and the silicon heaters to have a rectangular cross-section with a depth defined by the device layer thickness and a variable width and length.

KW - 22/3 OA procedure

UR - https://www.scopus.com/pages/publications/85074351595

U2 - 10.1109/MEMSYS.2019.8870667

DO - 10.1109/MEMSYS.2019.8870667

M3 - Conference contribution

AN - SCOPUS:85074351595

SN - 978-1-7281-1609-9 (USB)

SN - 978-1-7281-1611-2

SP - 648

EP - 651

BT - 2019 IEEE 32nd International Conference on Micro Electro Mechanical Systems, MEMS 2019

PB - IEEE

T2 - 32nd IEEE International Conference on Micro Electro Mechanical Systems 2019

Y2 - 27 January 2019 through 31 January 2019

ER -

High Power Si Sidewall Heaters for Fluidic Applications Fabricated by Trench-Assisted Surface Channel Technology

Abstract

Conference

Keywords

Access to Document

Other files and links

Fingerprint

Cite this