High-quality p + n Ge diodes selectively grown on Si with a sub-300nm transition region

Amir Sammak*, Wiebe D. De Boer, Lin Qi, Lis K. Nanver

*Corresponding author for this work

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Abstract

Selective epitaxial growth of crystalline Ge on Si in a standard ASM Epsilon 2000 CVD reactor is investigated for the fabrication of Ge ultrashallow junction p + n diodes. At the deposition temperature of 700°C, most of the lattice mismatch-defects are trapped within first 300nm of Ge growth and good quality single crystal Ge is achieved within a layer thickness of approximately 1 μm on window sizes up to hundreds of μm 2 . For p + n junction fabrication, a sequence of pure-Ga and then pure-B depositions are utilized for the ultrashallow p-doping of As-doped Ge-islands. The I-V characterization of the diodes confirms the good quality of the Ge and ideality factors of ∼ 1.1 with low saturation currents are reliably achieved.

Original languageEnglish
Title of host publicationESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference
Pages359-362
Number of pages4
DOIs
Publication statusPublished - 12 Dec 2011
Externally publishedYes
Event41st European Solid-State Device Research Conference, ESSDERC 2011 - Helsinki, Finland
Duration: 12 Sep 201116 Sep 2011
Conference number: 41

Conference

Conference41st European Solid-State Device Research Conference, ESSDERC 2011
Abbreviated titleESSDERC
CountryFinland
CityHelsinki
Period12/09/1116/09/11

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Sammak, A., De Boer, W. D., Qi, L., & Nanver, L. K. (2011). High-quality p + n Ge diodes selectively grown on Si with a sub-300nm transition region. In ESSDERC 2011 - Proceedings of the 41st European Solid-State Device Research Conference (pp. 359-362). [6044160] https://doi.org/10.1109/ESSDERC.2011.6044160