High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source

I.G. Isai, Alexeij Y. Kovalgin, J. Holleman, P.H. Woerlee, Hans Wallinga

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

    Original languageUndefined
    Title of host publicationProceedings of the 198th Meeting of the Electrochemical Society
    Place of PublicationPhoenix, USA
    Pages-
    Publication statusPublished - 22 Oct 2000

    Keywords

    • METIS-113907

    Cite this

    Isai, I. G., Kovalgin, A. Y., Holleman, J., Woerlee, P. H., & Wallinga, H. (2000). High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source. In Proceedings of the 198th Meeting of the Electrochemical Society (pp. -). Phoenix, USA.