High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source

I.G. Isai; Alexeij Y. Kovalgin; J. Holleman; P.H. Woerlee; Hans Wallinga

High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source

I.G. Isai, Alexeij Y. Kovalgin, J. Holleman, P.H. Woerlee, Hans Wallinga

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Original language	English
Title of host publication	Thin Film Transistor Technologies V
Subtitle of host publication	proceedings of the international symposium
Place of Publication	Pennington, NJ
Pages	169-175
Number of pages	7
Publication status	Published - 23 Oct 2001
Event	5th Symposium on Thin Film Transistor Technologies, TFTT 2000 - Phoenix, United States Duration: 23 Oct 2000 → 25 Oct 2000 Conference number: 5

Publication series

Name	Proceedings
Publisher	Electrochemical Society
Volume	2000-31

Conference

Conference	5th Symposium on Thin Film Transistor Technologies, TFTT 2000
Abbreviated title	TFTT
Country/Territory	United States
City	Phoenix
Period	23/10/00 → 25/10/00

Keywords

METIS-200745

Cite this

@inproceedings{c3282f87b46044a7b832561854b3a594,

title = "High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source",

keywords = "METIS-200745",

author = "I.G. Isai and Kovalgin, \{Alexeij Y.\} and J. Holleman and P.H. Woerlee and Hans Wallinga",

year = "2001",

month = oct,

day = "23",

language = "English",

isbn = "1-56677298-2",

series = "Proceedings",

publisher = "Electrochemical Society",

pages = "169--175",

booktitle = "Thin Film Transistor Technologies V",

note = "5th Symposium on Thin Film Transistor Technologies, TFTT 2000, TFTT ; Conference date: 23-10-2000 Through 25-10-2000",

}

Isai, IG, Kovalgin, AY, Holleman, J, Woerlee, PH & Wallinga, H 2001, High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source. in Thin Film Transistor Technologies V: proceedings of the international symposium. Proceedings, vol. 2000-31, Pennington, NJ, pp. 169-175, 5th Symposium on Thin Film Transistor Technologies, TFTT 2000, Phoenix, Arizona, United States, 23/10/00.

High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source. / Isai, I.G.; Kovalgin, Alexeij Y.; Holleman, J. et al.
Thin Film Transistor Technologies V: proceedings of the international symposium. Pennington, NJ, 2001. p. 169-175 (Proceedings; Vol. 2000-31).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High Quality Silicon Oxide Deposited with a Multipolar Electron Cyclotron Resonance Plasma Source

AU - Isai, I.G.

AU - Kovalgin, Alexeij Y.

AU - Holleman, J.

AU - Woerlee, P.H.

AU - Wallinga, Hans

N1 - Conference code: 5

PY - 2001/10/23

Y1 - 2001/10/23

KW - METIS-200745

M3 - Conference contribution

SN - 1-56677298-2

T3 - Proceedings

SP - 169

EP - 175

BT - Thin Film Transistor Technologies V

CY - Pennington, NJ

T2 - 5th Symposium on Thin Film Transistor Technologies, TFTT 2000

Y2 - 23 October 2000 through 25 October 2000

ER -