Abstract
High quality Nb/Al-based tunnel junctions, fabricated with a superconducting interface onto thick single crystalx-ray absorbers of Nb and Ta are discussed. Current-voltage characteristics, recorded at 0.5 K, show a subgap current which is still dominated by thermally excited quasiparticles. The quality parameter Rsubgap/Rnormal reaches a value of several million, which is unequalled for nonepitaxially sputtered tunnel junctions. The fabrication process and some development steps, such as preparation of ultrasmooth crystal surfaces are described. Observations of x-ray photons absorbed in Nb and Tasingle crystals detected by the superconducting tunnel junctions are also presented.
| Original language | English |
|---|---|
| Pages (from-to) | 1252-1254 |
| Number of pages | 3 |
| Journal | Applied physics letters |
| Volume | 71 |
| Issue number | 9 |
| DOIs | |
| Publication status | Published - 1997 |
Keywords
- n/a OA procedure
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