High reflectance La/B based multilayer mirrors for 6.x nm wavelength

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Abstract

For future photolithography processes, the wavelength of 6 nm may offer improved imaging specs. The perspective of this technology however, will depend critically on the performance of multilayer reflective mirrors, which are likely to be based on La/B. One of the issues is formation of LaxBy compounds at the interfaces, which decreases the optical contrast and reduce the reflectivity. To prevent such chemical interaction, passivation of La by nitrogen has been investigated. We successfully synthesized LaN layers that resulted in a new world record reflectivity of 64% at 6.6 nm at near normal incidence. This reduces the gap to the target of 70%, desired for a next generation lithography.

Original languageEnglish
Title of host publicationAdvances in X-Ray/EUV Optics and Components X
EditorsShunji Goto, Christian Morawe, Ali M. Khounsary
Place of PublicationBellingham, WA
PublisherSPIE
ISBN (Electronic)9781628417548
DOIs
Publication statusPublished - 2015
EventSPIE Optical Engineering + Applications 2015 - San Diego Convention Center, San Diego, United States
Duration: 9 Aug 201513 Aug 2015

Publication series

NameProceedings of SPIE
PublisherSPIE
Volume9588
ISSN (Print)0277-786X
ISSN (Electronic)1996-756X

Conference

ConferenceSPIE Optical Engineering + Applications 2015
CountryUnited States
CitySan Diego
Period9/08/1513/08/15

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