High reflectance multilayers for EUVL HVM-projection optics

Eric Louis; E.D. van Hattum; S. Alonso van der Westen; P. Sallé; Kees Grootkarzijn; E. Zoethout; Frederik Bijkerk; G. von Blanckenhagen; Stephan Müllender

doi:10.1117/12.846566

High reflectance multilayers for EUVL HVM-projection optics

Eric Louis, E.D. van Hattum, S. Alonso van der Westen, P. Sallé, Kees Grootkarzijn, E. Zoethout, Frederik Bijkerk, G. von Blanckenhagen, Stephan Müllender

XUV Optics

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

6 Citations (Scopus)

10 Downloads (Pure)

Abstract

Reported is a summary of multilayer deposition results by FOM on three elements of the projection optics of the ASML Extreme UV Lithography HVM tools. The coating process used is e-beam evaporation in combination with low-energy ion-beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 68%, with a maximum value of 69.6% and a non-correctable figure error added by the full multilayer stack of better than 35 picometer. The results are compared to the earlier coatings of the EUVL Process Development Tool.

Original language	English
Title of host publication	Extreme Ultraviolet (EUV) Lithography
Editors	Bruno M. La Fontaine
Place of Publication	San Jose, USA
Publisher	SPIE
Number of pages	5
Volume	7636
ISBN (Print)	9780819480507
DOIs	https://doi.org/10.1117/12.846566
Publication status	Published - 22 Mar 2010
Event	SPIE Conference on Extreme Ultraviolet (EUV) Lithography I, 2010 - San Jose, United States Duration: 22 Feb 2010 → 25 Feb 2010 Conference number: 1

Publication series

Name	Proceedings of SPIE
Publisher	SPIE--The International Society for Optical Engineering
Volume	7636
ISSN (Print)	0277-786X

Conference

Conference	SPIE Conference on Extreme Ultraviolet (EUV) Lithography I, 2010
Country/Territory	United States
City	San Jose
Period	22/02/10 → 25/02/10

Keywords

IR-77697

Access to Document

10.1117/12.846566

Cite this

Louis, E., van Hattum, E. D., Alonso van der Westen, S., Sallé, P., Grootkarzijn, K., Zoethout, E., Bijkerk, F., von Blanckenhagen, G., & Müllender, S. (2010). High reflectance multilayers for EUVL HVM-projection optics. In B. M. La Fontaine (Ed.), Extreme Ultraviolet (EUV) Lithography (Vol. 7636). Article 76362T (Proceedings of SPIE; Vol. 7636). SPIE. https://doi.org/10.1117/12.846566

@inproceedings{d48695a1c7f24254954fb83387be978d,

title = "High reflectance multilayers for EUVL HVM-projection optics",

abstract = "Reported is a summary of multilayer deposition results by FOM on three elements of the projection optics of the ASML Extreme UV Lithography HVM tools. The coating process used is e-beam evaporation in combination with low-energy ion-beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 68\%, with a maximum value of 69.6\% and a non-correctable figure error added by the full multilayer stack of better than 35 picometer. The results are compared to the earlier coatings of the EUVL Process Development Tool.",

keywords = "IR-77697",

author = "Eric Louis and \{van Hattum\}, E.D. and \{Alonso van der Westen\}, S. and P. Sall{\'e} and Kees Grootkarzijn and E. Zoethout and Frederik Bijkerk and \{von Blanckenhagen\}, G. and Stephan M{\"u}llender",

year = "2010",

month = mar,

day = "22",

doi = "10.1117/12.846566",

language = "English",

isbn = "9780819480507",

volume = "7636",

series = "Proceedings of SPIE",

publisher = "SPIE",

editor = "\{La Fontaine\}, \{Bruno M.\}",

booktitle = "Extreme Ultraviolet (EUV) Lithography",

address = "United States",

note = "SPIE Conference on Extreme Ultraviolet (EUV) Lithography I, 2010 ; Conference date: 22-02-2010 Through 25-02-2010",

}

Louis, E, van Hattum, ED, Alonso van der Westen, S, Sallé, P, Grootkarzijn, K, Zoethout, E, Bijkerk, F, von Blanckenhagen, G & Müllender, S 2010, High reflectance multilayers for EUVL HVM-projection optics. in BM La Fontaine (ed.), Extreme Ultraviolet (EUV) Lithography. vol. 7636, 76362T, Proceedings of SPIE, vol. 7636, SPIE, San Jose, USA, SPIE Conference on Extreme Ultraviolet (EUV) Lithography I, 2010, San Jose, California, United States, 22/02/10. https://doi.org/10.1117/12.846566

High reflectance multilayers for EUVL HVM-projection optics. / Louis, Eric; van Hattum, E.D.; Alonso van der Westen, S. et al.
Extreme Ultraviolet (EUV) Lithography. ed. / Bruno M. La Fontaine. Vol. 7636 San Jose, USA: SPIE, 2010. 76362T (Proceedings of SPIE; Vol. 7636).

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High reflectance multilayers for EUVL HVM-projection optics

AU - Louis, Eric

AU - van Hattum, E.D.

AU - Alonso van der Westen, S.

AU - Sallé, P.

AU - Grootkarzijn, Kees

AU - Zoethout, E.

AU - Bijkerk, Frederik

AU - von Blanckenhagen, G.

AU - Müllender, Stephan

N1 - Conference code: 1

PY - 2010/3/22

Y1 - 2010/3/22

N2 - Reported is a summary of multilayer deposition results by FOM on three elements of the projection optics of the ASML Extreme UV Lithography HVM tools. The coating process used is e-beam evaporation in combination with low-energy ion-beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 68%, with a maximum value of 69.6% and a non-correctable figure error added by the full multilayer stack of better than 35 picometer. The results are compared to the earlier coatings of the EUVL Process Development Tool.

AB - Reported is a summary of multilayer deposition results by FOM on three elements of the projection optics of the ASML Extreme UV Lithography HVM tools. The coating process used is e-beam evaporation in combination with low-energy ion-beam smoothening. The reflectance of the coatings, which are covered with a special protective capping layer, is typically around 68%, with a maximum value of 69.6% and a non-correctable figure error added by the full multilayer stack of better than 35 picometer. The results are compared to the earlier coatings of the EUVL Process Development Tool.

KW - IR-77697

U2 - 10.1117/12.846566

DO - 10.1117/12.846566

M3 - Conference contribution

SN - 9780819480507

VL - 7636

T3 - Proceedings of SPIE

BT - Extreme Ultraviolet (EUV) Lithography

A2 - La Fontaine, Bruno M.

PB - SPIE

CY - San Jose, USA

T2 - SPIE Conference on Extreme Ultraviolet (EUV) Lithography I, 2010

Y2 - 22 February 2010 through 25 February 2010

ER -

High reflectance multilayers for EUVL HVM-projection optics

Abstract

Publication series

Conference

Keywords

Access to Document

Fingerprint

Cite this