High-sensitivity high-stability silicon photodiodes for DUV, VUV and EUV spectral ranges

L. Shi*, S. Nihtianov, F. Scholze, A. Gottwald, L. K. Nanver

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

17 Citations (Scopus)
27 Downloads (Pure)

Abstract

In this paper, the optical and electrical performance of a newly developed silicon photodiode based on pure boron CVD technology (PureB-diodes) is introduced. Due to their extremely shallow p-n junction, with the depletion zone starting only a few nanometers below the surface, and nm-thin pure-boron-layer coverage of the anode surface, PureB-diodes have so far demonstrated the highest reported spectral responsivity in all sub-visible ultraviolet (UV) ranges: DUV (deep ultraviolet), VUV (vacuum ultraviolet) and EUV (extreme ultraviolet), covering a spectrum from 220 nm down to few nanometersMoreover, the measured responsivity at 13.5 nm wavelengths (EUV) approaches the theoretical maximum (∼0.27A/W). PureB-diodes also maintain excellent electrical characteristics, with saturation-current values typical for high-quality silicon diodes, and a high breakdown voltage. Experimental results have demonstrated the extremely high radiation hardness of PureB-diodes when exposed to high EUV radiant exposures in the order of a few hundred kJ/cm2. No change in the responsivity is observed within the experimental uncertainty. In the more challenging DUV and especially VUV ranges, PureB-diodes demonstrate a slight initial drop of responsivity (1 to 2%), after which they stabilizes their performance.

Original languageEnglish
Title of host publicationUV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XVII
DOIs
Publication statusPublished - 2 Nov 2011
Externally publishedYes
EventUV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XVII 2011 - San Diego, United States
Duration: 21 Aug 201124 Aug 2011
Conference number: 17

Publication series

NameProceedings of SPIE - The International Society for Optical Engineering
Volume8145
ISSN (Print)0277-786X

Conference

ConferenceUV, X-Ray, and Gamma-Ray Space Instrumentation for Astronomy XVII 2011
CountryUnited States
CitySan Diego
Period21/08/1124/08/11

Keywords

  • deep ultraviolet
  • extreme ultraviolet
  • photodiode
  • spectral responsivity
  • ultrashallow junction
  • vacuum ultraviolet

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