Abstract
Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization, emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narroe, highly doped base can be formed.
Original language | English |
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Pages (from-to) | 539-542 |
Number of pages | 4 |
Journal | Microelectronic engineering |
Volume | 19 |
Issue number | 1-4 |
DOIs | |
Publication status | Published - Sep 1992 |
Externally published | Yes |