High-speed, high-quality WEB NPN transistors with phosphorus emitters

L.K. Nanver*, E.J.G. Goudena, H.W. van Zeijl

*Corresponding author for this work

Research output: Contribution to journalArticleAcademicpeer-review

1 Citation (Scopus)
11 Downloads (Pure)

Abstract

Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization, emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narroe, highly doped base can be formed.

Original languageEnglish
Pages (from-to)539-542
Number of pages4
JournalMicroelectronic engineering
Volume19
Issue number1-4
DOIs
Publication statusPublished - Sep 1992
Externally publishedYes

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