High-speed, high-quality WEB NPN transistors with phosphorus emitters

L.K. Nanver*, E.J.G. Goudena, H.W. van Zeijl

*Corresponding author for this work

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Abstract

Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization, emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narroe, highly doped base can be formed.

Original languageEnglish
Pages (from-to)539-542
Number of pages4
JournalMicroelectronic engineering
Volume19
Issue number1-4
DOIs
Publication statusPublished - Sept 1992
Externally publishedYes

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  • High-speed, high-quality WEB NPN transistors with phosphorus emitters

    Nanver, L. K., Goudena, E. J. G. & van Zeijl, H. W., 1 Jan 1992, ESSDERC '92: 22nd European Solid State Device Research Conference. Maes, H. E., Van Overstraeten, R. J. & Mertens, R. P. (eds.). Piscataway, NJ: IEEE, 4 p. 5435155

    Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

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