High-speed, high-quality WEB NPN transistors with phosphorus emitters

L.K. Nanver; E.J.G. Goudena; H.W. van Zeijl

doi:10.1016/0167-9317(92)90491-9

High-speed, high-quality WEB NPN transistors with phosphorus emitters

L.K. Nanver^*, E.J.G. Goudena, H.W. van Zeijl

^*Corresponding author for this work

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization, emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narroe, highly doped base can be formed.

Original language	English
Pages (from-to)	539-542
Number of pages	4
Journal	Microelectronic engineering
Volume	19
Issue number	1-4
DOIs	https://doi.org/10.1016/0167-9317(92)90491-9
Publication status	Published - Sep 1992
Externally published	Yes

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10.1016/0167-9317(92)90491-9

1-s2.0-0167931792904919-mainFinal published version, 255 KB

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title = "High-speed, high-quality WEB NPN transistors with phosphorus emitters",

abstract = "Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization, emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narroe, highly doped base can be formed.",

author = "L.K. Nanver and E.J.G. Goudena and {van Zeijl}, H.W.",

year = "1992",

month = sep,

doi = "10.1016/0167-9317(92)90491-9",

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T1 - High-speed, high-quality WEB NPN transistors with phosphorus emitters

AU - Nanver, L.K.

AU - Goudena, E.J.G.

AU - van Zeijl, H.W.

PY - 1992/9

Y1 - 1992/9

N2 - Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization, emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narroe, highly doped base can be formed.

AB - Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization, emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narroe, highly doped base can be formed.

U2 - 10.1016/0167-9317(92)90491-9

DO - 10.1016/0167-9317(92)90491-9

M3 - Article

AN - SCOPUS:0026927076

VL - 19

SP - 539

EP - 542

JO - Microelectronic engineering

JF - Microelectronic engineering

SN - 0167-9317

IS - 1-4

ER -

High-speed, high-quality WEB NPN transistors with phosphorus emitters

Abstract

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