High-speed, high-quality WEB NPN transistors with phosphorus emitters

L. K. Nanver*, E. J.G. Goudena, H. W. Van Zeijl

*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

Abstract

Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narrow, highly doped base can be formed.

Original languageEnglish
Title of host publicationEuropean Solid-State Device Research Conference
EditorsHerman E. Maes, Roger J. Van Overstraeten, Robert P. Mertens
PublisherIEEE Computer Society Press
Pages539-542
Number of pages4
ISBN (Electronic)0444894780
Publication statusPublished - 1 Jan 1992
Externally publishedYes
Event22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium
Duration: 14 Sep 199217 Sep 1992
Conference number: 22

Conference

Conference22nd European Solid State Device Research Conference, ESSDERC 1992
Abbreviated titleESSDERC
CountryBelgium
CityLeuven
Period14/09/9217/09/92

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