High-speed, high-quality WEB NPN transistors with phosphorus emitters

L.K. Nanver; E.J.G. Goudena; H.W. van Zeijl

doi:10.1016/0167-9317(92)90491-9

High-speed, high-quality WEB NPN transistors with phosphorus emitters

L.K. Nanver^*, E.J.G. Goudena, H.W. van Zeijl

^*Corresponding author for this work

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

Abstract

Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narrow, highly doped base can be formed.

Original language	English
Title of host publication	ESSDERC '92
Subtitle of host publication	22nd European Solid State Device Research Conference
Editors	Herman E. Maes, Roger J. Van Overstraeten, Robert P. Mertens
Place of Publication	Piscataway, NJ
Publisher	IEEE
Number of pages	4
ISBN (Electronic)	0-444-89478-0
DOIs	https://doi.org/10.1016/0167-9317(92)90491-9
Publication status	Published - 1 Jan 1992
Externally published	Yes
Event	22nd European Solid State Device Research Conference, ESSDERC 1992 - Leuven, Belgium Duration: 14 Sept 1992 → 17 Sept 1992 Conference number: 22

Conference

Conference	22nd European Solid State Device Research Conference, ESSDERC 1992
Abbreviated title	ESSDERC
Country/Territory	Belgium
City	Leuven
Period	14/09/92 → 17/09/92

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10.1016/0167-9317(92)90491-9

Cite this

@inproceedings{21a93a2737fa42eea4601cb7e170ee73,

title = "High-speed, high-quality WEB NPN transistors with phosphorus emitters",

abstract = "Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narrow, highly doped base can be formed.",

author = "L.K. Nanver and E.J.G. Goudena and {van Zeijl}, H.W.",

year = "1992",

month = jan,

day = "1",

doi = "10.1016/0167-9317(92)90491-9",

language = "English",

editor = "Maes, {Herman E.} and {Van Overstraeten}, {Roger J.} and Mertens, {Robert P.}",

booktitle = "ESSDERC '92",

publisher = "IEEE",

address = "United States",

note = "22nd European Solid State Device Research Conference, ESSDERC 1992, ESSDERC ; Conference date: 14-09-1992 Through 17-09-1992",

}

Nanver, LK, Goudena, EJG & van Zeijl, HW 1992, High-speed, high-quality WEB NPN transistors with phosphorus emitters. in HE Maes, RJ Van Overstraeten & RP Mertens (eds), ESSDERC '92: 22nd European Solid State Device Research Conference., 5435155, IEEE, Piscataway, NJ, 22nd European Solid State Device Research Conference, ESSDERC 1992, Leuven, Belgium, 14/09/92. https://doi.org/10.1016/0167-9317(92)90491-9

High-speed, high-quality WEB NPN transistors with phosphorus emitters. / Nanver, L.K.; Goudena, E.J.G.; van Zeijl, H.W.
ESSDERC '92: 22nd European Solid State Device Research Conference. ed. / Herman E. Maes; Roger J. Van Overstraeten; Robert P. Mertens. Piscataway, NJ: IEEE, 1992. 5435155.

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

TY - GEN

T1 - High-speed, high-quality WEB NPN transistors with phosphorus emitters

AU - Nanver, L.K.

AU - Goudena, E.J.G.

AU - van Zeijl, H.W.

N1 - Conference code: 22

PY - 1992/1/1

Y1 - 1992/1/1

N2 - Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narrow, highly doped base can be formed.

AB - Phosphorus implanted washed emitters, annealed at low temperatures, are produced in a washed emitter-base scheme with a self-aligned pedestal collector. The strong interaction between the preamorphization emitter and intrinsic base doping is studied to determine the conditions under which efficient, shallow emitters together with a narrow, highly doped base can be formed.

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U2 - 10.1016/0167-9317(92)90491-9

DO - 10.1016/0167-9317(92)90491-9

M3 - Conference contribution

AN - SCOPUS:84926416479

BT - ESSDERC '92

A2 - Maes, Herman E.

A2 - Van Overstraeten, Roger J.

A2 - Mertens, Robert P.

PB - IEEE

CY - Piscataway, NJ

T2 - 22nd European Solid State Device Research Conference, ESSDERC 1992

Y2 - 14 September 1992 through 17 September 1992

ER -

High-speed, high-quality WEB NPN transistors with phosphorus emitters

Abstract

Conference

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