High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: beta-L optimisation

R.P.J. IJsselsteijn, Johannes W.M. Hilgenkamp, Dick Veldhuis, Jakob Flokstra, Horst Rogalla

    Research output: Contribution to conferencePoster

    Original languageEnglish
    Publication statusPublished - 5 Jul 1994
    Event4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994 - Grenoble, France
    Duration: 5 Jul 19949 Jul 1994
    Conference number: 4

    Conference

    Conference4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994
    Abbreviated titleM2S-HTSC
    CountryFrance
    CityGrenoble
    Period5/07/949/07/94

    Keywords

    • METIS-134484

    Cite this

    IJsselsteijn, R. P. J., Hilgenkamp, J. W. M., Veldhuis, D., Flokstra, J., & Rogalla, H. (1994). High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: beta-L optimisation. Poster session presented at 4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994, Grenoble, France.
    IJsselsteijn, R.P.J. ; Hilgenkamp, Johannes W.M. ; Veldhuis, Dick ; Flokstra, Jakob ; Rogalla, Horst. / High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions : beta-L optimisation. Poster session presented at 4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994, Grenoble, France.
    @conference{da18ba92412742979d3a7238f9f87bcf,
    title = "High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: beta-L optimisation",
    keywords = "METIS-134484",
    author = "R.P.J. IJsselsteijn and Hilgenkamp, {Johannes W.M.} and Dick Veldhuis and Jakob Flokstra and Horst Rogalla",
    year = "1994",
    month = "7",
    day = "5",
    language = "English",
    note = "4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994, M2S-HTSC ; Conference date: 05-07-1994 Through 09-07-1994",

    }

    IJsselsteijn, RPJ, Hilgenkamp, JWM, Veldhuis, D, Flokstra, J & Rogalla, H 1994, 'High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: beta-L optimisation' 4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994, Grenoble, France, 5/07/94 - 9/07/94, .

    High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions : beta-L optimisation. / IJsselsteijn, R.P.J.; Hilgenkamp, Johannes W.M.; Veldhuis, Dick; Flokstra, Jakob; Rogalla, Horst.

    1994. Poster session presented at 4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994, Grenoble, France.

    Research output: Contribution to conferencePoster

    TY - CONF

    T1 - High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions

    T2 - beta-L optimisation

    AU - IJsselsteijn, R.P.J.

    AU - Hilgenkamp, Johannes W.M.

    AU - Veldhuis, Dick

    AU - Flokstra, Jakob

    AU - Rogalla, Horst

    PY - 1994/7/5

    Y1 - 1994/7/5

    KW - METIS-134484

    M3 - Poster

    ER -

    IJsselsteijn RPJ, Hilgenkamp JWM, Veldhuis D, Flokstra J, Rogalla H. High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: beta-L optimisation. 1994. Poster session presented at 4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994, Grenoble, France.