High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: beta-L optimisation

R.P.J. IJsselsteijn, Johannes W.M. Hilgenkamp, Dick Veldhuis, Jakob Flokstra, Horst Rogalla

    Research output: Contribution to conferencePoster

    Original languageEnglish
    Publication statusPublished - 5 Jul 1994
    Event4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994 - Grenoble, France
    Duration: 5 Jul 19949 Jul 1994
    Conference number: 4

    Conference

    Conference4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994
    Abbreviated titleM2S-HTSC
    CountryFrance
    CityGrenoble
    Period5/07/949/07/94

    Keywords

    • METIS-134484

    Cite this

    IJsselsteijn, R. P. J., Hilgenkamp, J. W. M., Veldhuis, D., Flokstra, J., & Rogalla, H. (1994). High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: beta-L optimisation. Poster session presented at 4th International Conference on Materials and Mechanisms of High Temperature Superconductivity, M2S-HTSC IV 1994, Grenoble, France.