High-Tc bolometers with silicon-nitride spiderweb suspension for far-infrared detection

M.J.M.E. De Nivelle, M.P. Bruijn, P.A.J. de Korte, Stefan Sanchez, Michael Curt Elwenspoek, T. Heidenblut, B. Schwierzi

  • 12 Citations

Abstract

High-Tc GdBa2Cu3O7-δ (GBCO) superconducting transition edge bolometers with operating temperatures near 90 K have been made with both closed silicon-nitride membranes and patterned silicon-nitride (SiN) spiderweb-like suspension structures. As a substrate silicon-on-nitride (SON) wafers are used which are made by fusion bonding of a silicon wafer to a silicon wafer with a silicon-nitride top layer. The resulting monocrystalline silicon top layer on the silicon-nitride membranes enables the epitaxial growth of GBCO. By patterning the silicon-nitride the thermal conductance G is reduced from about 20 to 3 μW/K. The noise of both types of bolometers is dominated by the intrinsic noise from phonon fluctuations in the thermal conductance G. The optical efficiency in the far infrared is about 75% due to a goldblack absorption layer. The noise equivalent power NEP for FIR detection is 1.8 pW/√Hz, and the detectivity D* is 5.4×1010 cm √Hz/W. Time constants are 0.1 and 0.6 s, for the closed membrane and the spiderweb like bolometers respectively. The effective time constant can be reduced with about a factor 3 by using voltage bias. Further reduction necessarily results in an increase of the NEP due to the 1/f noise of the superconductor
Original languageUndefined
Pages (from-to)3350-3353
Number of pages4
JournalIEEE transactions on applied superconductivity
Volume9
Issue number2, Par
DOIs
StatePublished - Jun 1999

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Silicon nitride
Bolometers
Membranes
Silicon wafers
Monocrystalline silicon
Bias voltage
Epitaxial growth
Nitrides
Superconducting materials
Fusion reactions
Infrared radiation
Silicon
Substrates
Temperature

Keywords

  • IR-55973
  • EWI-13212

Cite this

De Nivelle, M. J. M. E., Bruijn, M. P., de Korte, P. A. J., Sanchez, S., Elwenspoek, M. C., Heidenblut, T., & Schwierzi, B. (1999). High-Tc bolometers with silicon-nitride spiderweb suspension for far-infrared detection. IEEE transactions on applied superconductivity, 9(2, Par), 3350-3353. DOI: 10.1109/77.783747

De Nivelle, M.J.M.E.; Bruijn, M.P.; de Korte, P.A.J.; Sanchez, Stefan; Elwenspoek, Michael Curt; Heidenblut, T.; Schwierzi, B. / High-Tc bolometers with silicon-nitride spiderweb suspension for far-infrared detection.

In: IEEE transactions on applied superconductivity, Vol. 9, No. 2, Par, 06.1999, p. 3350-3353.

Research output: Scientific - peer-reviewArticle

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abstract = "High-Tc GdBa2Cu3O7-δ (GBCO) superconducting transition edge bolometers with operating temperatures near 90 K have been made with both closed silicon-nitride membranes and patterned silicon-nitride (SiN) spiderweb-like suspension structures. As a substrate silicon-on-nitride (SON) wafers are used which are made by fusion bonding of a silicon wafer to a silicon wafer with a silicon-nitride top layer. The resulting monocrystalline silicon top layer on the silicon-nitride membranes enables the epitaxial growth of GBCO. By patterning the silicon-nitride the thermal conductance G is reduced from about 20 to 3 μW/K. The noise of both types of bolometers is dominated by the intrinsic noise from phonon fluctuations in the thermal conductance G. The optical efficiency in the far infrared is about 75% due to a goldblack absorption layer. The noise equivalent power NEP for FIR detection is 1.8 pW/√Hz, and the detectivity D* is 5.4×1010 cm √Hz/W. Time constants are 0.1 and 0.6 s, for the closed membrane and the spiderweb like bolometers respectively. The effective time constant can be reduced with about a factor 3 by using voltage bias. Further reduction necessarily results in an increase of the NEP due to the 1/f noise of the superconductor",
keywords = "IR-55973, EWI-13212",
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De Nivelle, MJME, Bruijn, MP, de Korte, PAJ, Sanchez, S, Elwenspoek, MC, Heidenblut, T & Schwierzi, B 1999, 'High-Tc bolometers with silicon-nitride spiderweb suspension for far-infrared detection' IEEE transactions on applied superconductivity, vol 9, no. 2, Par, pp. 3350-3353. DOI: 10.1109/77.783747

High-Tc bolometers with silicon-nitride spiderweb suspension for far-infrared detection. / De Nivelle, M.J.M.E.; Bruijn, M.P.; de Korte, P.A.J.; Sanchez, Stefan; Elwenspoek, Michael Curt; Heidenblut, T.; Schwierzi, B.

In: IEEE transactions on applied superconductivity, Vol. 9, No. 2, Par, 06.1999, p. 3350-3353.

Research output: Scientific - peer-reviewArticle

TY - JOUR

T1 - High-Tc bolometers with silicon-nitride spiderweb suspension for far-infrared detection

AU - De Nivelle,M.J.M.E.

AU - Bruijn,M.P.

AU - de Korte,P.A.J.

AU - Sanchez,Stefan

AU - Elwenspoek,Michael Curt

AU - Heidenblut,T.

AU - Schwierzi,B.

PY - 1999/6

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N2 - High-Tc GdBa2Cu3O7-δ (GBCO) superconducting transition edge bolometers with operating temperatures near 90 K have been made with both closed silicon-nitride membranes and patterned silicon-nitride (SiN) spiderweb-like suspension structures. As a substrate silicon-on-nitride (SON) wafers are used which are made by fusion bonding of a silicon wafer to a silicon wafer with a silicon-nitride top layer. The resulting monocrystalline silicon top layer on the silicon-nitride membranes enables the epitaxial growth of GBCO. By patterning the silicon-nitride the thermal conductance G is reduced from about 20 to 3 μW/K. The noise of both types of bolometers is dominated by the intrinsic noise from phonon fluctuations in the thermal conductance G. The optical efficiency in the far infrared is about 75% due to a goldblack absorption layer. The noise equivalent power NEP for FIR detection is 1.8 pW/√Hz, and the detectivity D* is 5.4×1010 cm √Hz/W. Time constants are 0.1 and 0.6 s, for the closed membrane and the spiderweb like bolometers respectively. The effective time constant can be reduced with about a factor 3 by using voltage bias. Further reduction necessarily results in an increase of the NEP due to the 1/f noise of the superconductor

AB - High-Tc GdBa2Cu3O7-δ (GBCO) superconducting transition edge bolometers with operating temperatures near 90 K have been made with both closed silicon-nitride membranes and patterned silicon-nitride (SiN) spiderweb-like suspension structures. As a substrate silicon-on-nitride (SON) wafers are used which are made by fusion bonding of a silicon wafer to a silicon wafer with a silicon-nitride top layer. The resulting monocrystalline silicon top layer on the silicon-nitride membranes enables the epitaxial growth of GBCO. By patterning the silicon-nitride the thermal conductance G is reduced from about 20 to 3 μW/K. The noise of both types of bolometers is dominated by the intrinsic noise from phonon fluctuations in the thermal conductance G. The optical efficiency in the far infrared is about 75% due to a goldblack absorption layer. The noise equivalent power NEP for FIR detection is 1.8 pW/√Hz, and the detectivity D* is 5.4×1010 cm √Hz/W. Time constants are 0.1 and 0.6 s, for the closed membrane and the spiderweb like bolometers respectively. The effective time constant can be reduced with about a factor 3 by using voltage bias. Further reduction necessarily results in an increase of the NEP due to the 1/f noise of the superconductor

KW - IR-55973

KW - EWI-13212

U2 - 10.1109/77.783747

DO - 10.1109/77.783747

M3 - Article

VL - 9

SP - 3350

EP - 3353

JO - IEEE transactions on applied superconductivity

T2 - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

SN - 1051-8223

IS - 2, Par

ER -

De Nivelle MJME, Bruijn MP, de Korte PAJ, Sanchez S, Elwenspoek MC, Heidenblut T et al. High-Tc bolometers with silicon-nitride spiderweb suspension for far-infrared detection. IEEE transactions on applied superconductivity. 1999 Jun;9(2, Par):3350-3353. Available from, DOI: 10.1109/77.783747