High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications

Hiroaki Myoren, Martin A.J. Verhoeven, Jian Chen, Kensuke Nakajima, Tsutomu Yamashita, David H.A. Blank, Horst Rogalla

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Abstract

The authors successfully fabricated high-Tc ramp-type junctions with PrBa2Cu3-xGaxO7-δ (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The IcRn products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions.
Original languageEnglish
Pages (from-to)132-136
Number of pages5
JournalIEEE transactions on applied superconductivity
Volume8
Issue number3
DOIs
Publication statusPublished - 1998

Keywords

  • Ga-doped PBCO barrier
  • High-temperature superconductors
  • MgO substrates
  • Millimeter-wave response
  • Ramptype Josephson junctions
  • THz response

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    Myoren, H., Verhoeven, M. A. J., Chen, J., Nakajima, K., Yamashita, T., Blank, D. H. A., & Rogalla, H. (1998). High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications. IEEE transactions on applied superconductivity, 8(3), 132-136. https://doi.org/10.1109/77.712144