High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications

Hiroaki Myoren; Martin A.J. Verhoeven; Jian Chen; Kensuke Nakajima; Tsutomu Yamashita; David H.A. Blank; Horst Rogalla

doi:10.1109/77.712144

High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications

Hiroaki Myoren, Martin A.J. Verhoeven, Jian Chen, Kensuke Nakajima, Tsutomu Yamashita, David H.A. Blank, Horst Rogalla

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Abstract

The authors successfully fabricated high-Tc ramp-type junctions with PrBa2Cu3-xGaxO7-δ (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The IcRn products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions.

Original language	English
Pages (from-to)	132-136
Number of pages	5
Journal	IEEE transactions on applied superconductivity
Volume	8
Issue number	3
DOIs	https://doi.org/10.1109/77.712144
Publication status	Published - 1998

Keywords

Ga-doped PBCO barrier
High-temperature superconductors
MgO substrates
Millimeter-wave response
Ramptype Josephson junctions
THz response

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@article{23ce1445ebd14bfbb65db09ae6d1e58f,

title = "High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications",

abstract = "The authors successfully fabricated high-Tc ramp-type junctions with PrBa2Cu3-xGaxO7-δ (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The IcRn products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions.",

keywords = "Ga-doped PBCO barrier, High-temperature superconductors, MgO substrates, Millimeter-wave response, Ramptype Josephson junctions, THz response",

author = "Hiroaki Myoren and Verhoeven, {Martin A.J.} and Jian Chen and Kensuke Nakajima and Tsutomu Yamashita and Blank, {David H.A.} and Horst Rogalla",

year = "1998",

doi = "10.1109/77.712144",

language = "English",

volume = "8",

pages = "132--136",

journal = "IEEE transactions on applied superconductivity",

issn = "1051-8223",

publisher = "IEEE",

number = "3",

}

TY - JOUR

T1 - High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications

AU - Myoren, Hiroaki

AU - Verhoeven, Martin A.J.

AU - Chen, Jian

AU - Nakajima, Kensuke

AU - Yamashita, Tsutomu

AU - Blank, David H.A.

AU - Rogalla, Horst

PY - 1998

Y1 - 1998

N2 - The authors successfully fabricated high-Tc ramp-type junctions with PrBa2Cu3-xGaxO7-δ (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The IcRn products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions.

AB - The authors successfully fabricated high-Tc ramp-type junctions with PrBa2Cu3-xGaxO7-δ (PBCGO: x=0.1, 0.4) barriers on MgO substrates. The junctions showed resistively shunted Josephson junction (RSJ)-like I-V curves with thermally and voltage activated conductivity. The IcRn products for these junctions scaled very well with the Ga-doping. Maximum response of the junctions for 100-GHz millimeter-wave irradiation could be observed up to 12 mV corresponding to 6 THz. Using far infrared laser radiation, we confirmed a terahertz (THz) response of these junctions. These results show promise for THz-wave applications of ramp-type Josephson junctions.

KW - Ga-doped PBCO barrier

KW - High-temperature superconductors

KW - MgO substrates

KW - Millimeter-wave response

KW - Ramptype Josephson junctions

KW - THz response

U2 - 10.1109/77.712144

DO - 10.1109/77.712144

M3 - Article

SN - 1051-8223

VL - 8

SP - 132

EP - 136

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

IS - 3

ER -

High-Tc ramp-type Josephson junctions on MgO substrates for Terahertz applications

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