TY - JOUR
T1 - High-Tc thin films prepared by laser ablation
T2 - material distribution and droplet problem
AU - Blank, D.H.A.
AU - IJsselsteijn, R.P.J.
AU - Out, P.G.
AU - Kuiper, H.J.H.
AU - Flokstra, J.
AU - Rogalla, H.
PY - 1992
Y1 - 1992
N2 - The lateral material distribution of laser-deposited YBa2Cu3O7−δ films and the density of droplets coming from the target were studied by varying the laser pulse energy, the laser spot size and the target-to-substrate distance. Silicon wafers at ambient temperature were used as substrates to guarantee a large sticking coefficient of the particles. The deposition rate is found to depend linearly on the laser energy density E and quadratically on the spot size S at the target, whereas the droplet density is slightly dependent on E and increases linearly with 1/S, yielding a threshold energy of 0.9 J cm−2. With a laser spot size of 7.15 mm2 and a laser energy density of 1.2 J cm−2, we were able to reduce the number of droplets to one to two per 500 μm2 for a high quality high film with a typical thickness of 100 nm.
AB - The lateral material distribution of laser-deposited YBa2Cu3O7−δ films and the density of droplets coming from the target were studied by varying the laser pulse energy, the laser spot size and the target-to-substrate distance. Silicon wafers at ambient temperature were used as substrates to guarantee a large sticking coefficient of the particles. The deposition rate is found to depend linearly on the laser energy density E and quadratically on the spot size S at the target, whereas the droplet density is slightly dependent on E and increases linearly with 1/S, yielding a threshold energy of 0.9 J cm−2. With a laser spot size of 7.15 mm2 and a laser energy density of 1.2 J cm−2, we were able to reduce the number of droplets to one to two per 500 μm2 for a high quality high film with a typical thickness of 100 nm.
U2 - 10.1016/0921-5107(92)90106-J
DO - 10.1016/0921-5107(92)90106-J
M3 - Article
SN - 0921-5107
VL - 13
SP - 67
EP - 74
JO - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
JF - Materials Science and Engineering B: Solid-State Materials for Advanced Technology
IS - 1
ER -