High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization

R.P.J. IJsselsteijn, J.W.M. Hilgenkamp, D. Veldhuis, J. Flokstra, H. Rogalla

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Abstract

Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).
Original languageEnglish
Pages (from-to)3353-3354
Number of pages2
JournalPhysica C
Volume235-240
Issue number5
DOIs
Publication statusPublished - 1994

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Focused ion beams
SQUIDs
Etching
ion beams
etching
optimization
Bias currents
White noise
noise measurement
white noise
Screening
Grain boundaries
templates
screening
grain boundaries
Modulation
modulation
Temperature
temperature

Cite this

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title = "High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization",
abstract = "Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).",
author = "R.P.J. IJsselsteijn and J.W.M. Hilgenkamp and D. Veldhuis and J. Flokstra and H. Rogalla",
year = "1994",
doi = "10.1016/0921-4534(94)91203-3",
language = "English",
volume = "235-240",
pages = "3353--3354",
journal = "Physica C",
issn = "0921-4534",
publisher = "Elsevier",
number = "5",

}

High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization. / IJsselsteijn, R.P.J.; Hilgenkamp, J.W.M.; Veldhuis, D.; Flokstra, J.; Rogalla, H.

In: Physica C, Vol. 235-240, No. 5, 1994, p. 3353-3354.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization

AU - IJsselsteijn, R.P.J.

AU - Hilgenkamp, J.W.M.

AU - Veldhuis, D.

AU - Flokstra, J.

AU - Rogalla, H.

PY - 1994

Y1 - 1994

N2 - Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).

AB - Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).

U2 - 10.1016/0921-4534(94)91203-3

DO - 10.1016/0921-4534(94)91203-3

M3 - Article

VL - 235-240

SP - 3353

EP - 3354

JO - Physica C

JF - Physica C

SN - 0921-4534

IS - 5

ER -