TY - JOUR
T1 - High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization
AU - IJsselsteijn, R.P.J.
AU - Hilgenkamp, J.W.M.
AU - Veldhuis, D.
AU - Flokstra, J.
AU - Rogalla, H.
PY - 1994
Y1 - 1994
N2 - Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).
AB - Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).
U2 - 10.1016/0921-4534(94)91203-3
DO - 10.1016/0921-4534(94)91203-3
M3 - Article
VL - 235-240
SP - 3353
EP - 3354
JO - Physica C
JF - Physica C
SN - 0921-4534
IS - 5
ER -