High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization

R.P.J. IJsselsteijn; J.W.M. Hilgenkamp; D. Veldhuis; J. Flokstra; H. Rogalla

doi:10.1016/0921-4534(94)91203-3

High T_c bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: β_L optimization

R.P.J. IJsselsteijn, J.W.M. Hilgenkamp, D. Veldhuis, J. Flokstra, H. Rogalla

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter β_L can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ₀·Hz¹² (1.8·10^-29 J·Hz^-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).

Original language	English
Pages (from-to)	3353-3354
Number of pages	2
Journal	Physica C
Volume	235-240
Issue number	5
DOIs	https://doi.org/10.1016/0921-4534(94)91203-3
Publication status	Published - 1994

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title = "High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization",

abstract = "Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).",

author = "R.P.J. IJsselsteijn and J.W.M. Hilgenkamp and D. Veldhuis and J. Flokstra and H. Rogalla",

year = "1994",

doi = "10.1016/0921-4534(94)91203-3",

language = "English",

volume = "235-240",

pages = "3353--3354",

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T1 - High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization

AU - IJsselsteijn, R.P.J.

AU - Hilgenkamp, J.W.M.

AU - Veldhuis, D.

AU - Flokstra, J.

AU - Rogalla, H.

PY - 1994

Y1 - 1994

N2 - Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).

AB - Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).

U2 - 10.1016/0921-4534(94)91203-3

DO - 10.1016/0921-4534(94)91203-3

M3 - Article

SN - 0921-4534

VL - 235-240

SP - 3353

EP - 3354

JO - Physica C

JF - Physica C

IS - 5

ER -

High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization

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High T_c bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: β_L optimization