High Tc bi-epitaxial dc SQUIDs structured by focused ion beam etching from single junctions: βL optimization

R.P.J. IJsselsteijn, J.W.M. Hilgenkamp, D. Veldhuis, J. Flokstra, H. Rogalla

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Abstract

Focused ion beam etching has been used to pattern dc SQUIDs into previously characterised template bi-epitaxial grain boundary junctions. In this way, the screening parameter βL can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are presented. A minimal white noise level of 22 μφ0·Hz12 (1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could be almost completely suppressed down to 1 Hz in the entire temperature range (10–65 K).
Original languageEnglish
Pages (from-to)3353-3354
Number of pages2
JournalPhysica C
Volume235-240
Issue number5
DOIs
Publication statusPublished - 1994

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