High Tc bi-epitaxial junctions and dc SQUIDs structured by focused ion beam etching

R.P.J. IJsselsteijn, Johannes W.M. Hilgenkamp, Dick Veldhuis, Jakob Flokstra, Horst Rogalla, C. Traeholt, H.W. Zandbergen

    Research output: Contribution to conferencePoster

    Original languageEnglish
    Publication statusPublished - 21 Oct 1994

    Cite this

    @conference{abe66024a5fc47ed856453fe84cb3217,
    title = "High Tc bi-epitaxial junctions and dc SQUIDs structured by focused ion beam etching",
    author = "R.P.J. IJsselsteijn and Hilgenkamp, {Johannes W.M.} and Dick Veldhuis and Jakob Flokstra and Horst Rogalla and C. Traeholt and H.W. Zandbergen",
    year = "1994",
    month = "10",
    day = "21",
    language = "English",

    }

    High Tc bi-epitaxial junctions and dc SQUIDs structured by focused ion beam etching. / IJsselsteijn, R.P.J.; Hilgenkamp, Johannes W.M.; Veldhuis, Dick; Flokstra, Jakob; Rogalla, Horst; Traeholt, C.; Zandbergen, H.W.

    1994.

    Research output: Contribution to conferencePoster

    TY - CONF

    T1 - High Tc bi-epitaxial junctions and dc SQUIDs structured by focused ion beam etching

    AU - IJsselsteijn, R.P.J.

    AU - Hilgenkamp, Johannes W.M.

    AU - Veldhuis, Dick

    AU - Flokstra, Jakob

    AU - Rogalla, Horst

    AU - Traeholt, C.

    AU - Zandbergen, H.W.

    PY - 1994/10/21

    Y1 - 1994/10/21

    M3 - Poster

    ER -