High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

R.P.J. IJsselsteijn; J.W.M. Hilgenkamp; D. Veldhuis; J. Flokstra; H. Rogalla; C. Traeholt; H.W. Zandbergen

doi:10.1109/77.403101

High T_c Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

R.P.J. IJsselsteijn, J.W.M. Hilgenkamp, D. Veldhuis, J. Flokstra, H. Rogalla, C. Traeholt, H.W. Zandbergen

Faculty of Science and Technology

Research output: Contribution to journal › Article › Academic › peer-review

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Abstract

Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ₀·Hz-^1/2(1.8·10^-29 J·Hz^-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

Original language	English
Pages (from-to)	2513-2516
Number of pages	4
Journal	IEEE transactions on applied superconductivity
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/77.403101
Publication status	Published - 1995

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IJsselstein1995highFinal published version, 368 KB

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title = "High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching",

abstract = "Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter {\ss} can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).",

author = "R.P.J. IJsselsteijn and J.W.M. Hilgenkamp and D. Veldhuis and J. Flokstra and H. Rogalla and C. Traeholt and H.W. Zandbergen",

year = "1995",

doi = "10.1109/77.403101",

language = "English",

volume = "5",

pages = "2513--2516",

journal = "IEEE transactions on applied superconductivity",

issn = "1051-8223",

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T1 - High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

AU - IJsselsteijn, R.P.J.

AU - Hilgenkamp, J.W.M.

AU - Veldhuis, D.

AU - Flokstra, J.

AU - Rogalla, H.

AU - Traeholt, C.

AU - Zandbergen, H.W.

PY - 1995

Y1 - 1995

N2 - Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

AB - Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

U2 - 10.1109/77.403101

DO - 10.1109/77.403101

M3 - Article

SN - 1051-8223

VL - 5

SP - 2513

EP - 2516

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

IS - 2

ER -

High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

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High T_c Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching