High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

R.P.J. IJsselsteijn, J.W.M. Hilgenkamp, D. Veldhuis, J. Flokstra, H. Rogalla, C. Traeholt, H.W. Zandbergen

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Abstract

Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).
Original languageEnglish
Pages (from-to)2513-2516
Number of pages4
JournalIEEE transactions on applied superconductivity
Volume5
Issue number2
DOIs
Publication statusPublished - 1995

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Focused ion beams
SQUIDs
Etching
direct current
ion beams
etching
Bias currents
White noise
noise measurement
white noise
Screening
Grain boundaries
templates
screening
grain boundaries
Modulation
modulation
Temperature
temperature

Cite this

@article{142641184ad34d4299f30db9e743f529,
title = "High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching",
abstract = "Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter {\ss} can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).",
author = "R.P.J. IJsselsteijn and J.W.M. Hilgenkamp and D. Veldhuis and J. Flokstra and H. Rogalla and C. Traeholt and H.W. Zandbergen",
year = "1995",
doi = "10.1109/77.403101",
language = "English",
volume = "5",
pages = "2513--2516",
journal = "IEEE transactions on applied superconductivity",
issn = "1051-8223",
publisher = "IEEE",
number = "2",

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High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching. / IJsselsteijn, R.P.J.; Hilgenkamp, J.W.M.; Veldhuis, D.; Flokstra, J.; Rogalla, H.; Traeholt, C.; Zandbergen, H.W.

In: IEEE transactions on applied superconductivity, Vol. 5, No. 2, 1995, p. 2513-2516.

Research output: Contribution to journalArticleAcademicpeer-review

TY - JOUR

T1 - High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

AU - IJsselsteijn, R.P.J.

AU - Hilgenkamp, J.W.M.

AU - Veldhuis, D.

AU - Flokstra, J.

AU - Rogalla, H.

AU - Traeholt, C.

AU - Zandbergen, H.W.

PY - 1995

Y1 - 1995

N2 - Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

AB - Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

U2 - 10.1109/77.403101

DO - 10.1109/77.403101

M3 - Article

VL - 5

SP - 2513

EP - 2516

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

SN - 1051-8223

IS - 2

ER -