High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

R.P.J. IJsselsteijn; J.W.M. Hilgenkamp; D. Veldhuis; J. Flokstra; H. Rogalla; C. Traeholt; H.W. Zandbergen

doi:10.1109/77.403101

High T_c Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

R.P.J. IJsselsteijn
, J.W.M. Hilgenkamp
, D. Veldhuis
, J. Flokstra
, H. Rogalla
, C. Traeholt
, H.W. Zandbergen

Faculty of Science and Technology

Research output: Contribution to journal › Conference article › Academic › peer-review

1 Citation (Scopus)

157 Downloads (Pure)

Abstract

Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ₀·Hz-^1/2(1.8·10^-29 J·Hz^-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

Original language	English
Pages (from-to)	2513-2516
Number of pages	4
Journal	IEEE transactions on applied superconductivity
Volume	5
Issue number	2
DOIs	https://doi.org/10.1109/77.403101
Publication status	Published - 1995
Event	1994 Applied Superconductivity Conference, ASC 1994 - Boston, United States Duration: 15 Oct 1994 → 20 Oct 1994

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@article{142641184ad34d4299f30db9e743f529,

title = "High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching",

abstract = "Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter {\ss} can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).",

author = "R.P.J. IJsselsteijn and J.W.M. Hilgenkamp and D. Veldhuis and J. Flokstra and H. Rogalla and C. Traeholt and H.W. Zandbergen",

year = "1995",

doi = "10.1109/77.403101",

language = "English",

volume = "5",

pages = "2513--2516",

journal = "IEEE transactions on applied superconductivity",

issn = "1051-8223",

publisher = "IEEE",

number = "2",

note = "1994 Applied Superconductivity Conference, ASC 1994, ASC ; Conference date: 15-10-1994 Through 20-10-1994",

}

TY - JOUR

T1 - High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

AU - IJsselsteijn, R.P.J.

AU - Hilgenkamp, J.W.M.

AU - Veldhuis, D.

AU - Flokstra, J.

AU - Rogalla, H.

AU - Traeholt, C.

AU - Zandbergen, H.W.

PY - 1995

Y1 - 1995

N2 - Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

AB - Focused ion beam etching has been used to pattern dc SQUIDS into previously characterised template bi-epitaxial grain boundary junctions. Using this technique the screening parameter ß can be optimised for a chosen temperature (in our case 30 K). Electrical characteristics, including noise measurements, are prsented. A minimal white noise level of 22 µφ0·Hz-1/2(1.8·10-29 J·Hz-1) has been obtained at 20 K. Using bias current modulation the 1/f noise could almost completely be suppressed down to 1 Hz in the entire temperature range (10-65 K).

U2 - 10.1109/77.403101

DO - 10.1109/77.403101

M3 - Conference article

SN - 1051-8223

VL - 5

SP - 2513

EP - 2516

JO - IEEE transactions on applied superconductivity

JF - IEEE transactions on applied superconductivity

IS - 2

T2 - 1994 Applied Superconductivity Conference, ASC 1994

Y2 - 15 October 1994 through 20 October 1994

ER -

High Tc Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching

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High T_c Bi-epitaxial junctions and DC SQUIDs structured by focused ion beam etching