High voltage implanted RESURF p-LDMOS using BiCMOS technology

Ming-Jiang Zhou, Ming-Jiang Zhou, A. de Bruycker, A., A. Van Calster, J. Witters

Research output: Contribution to journalArticleAcademic

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Abstract

Summary form only given. The authors present a complementary RESURF p-LDMOS in which the n+ buried layer is used as an effective substrate and a field implant is introduced to modify the drift charges. The implant conditions in this case, particularly the placements, are studied. After processing, VB are investigated with different implant placement (LA, LB) and field oxide lengths LF. It is found that although the ion implant covers part of the drift region, the device performance can still be greatly improved. Results show that a long enough implant, compatible with LF, under the field oxide can result in the maximum, VB= VBP. This is verified by simulation results, which show that the peak of the surface electric field is significantly reduced. Results also show that a full length (LF) implantation under the field oxide can result in the minimum R on for a fixed LF
Original languageEnglish
Pages (from-to)425-429
JournalIEEE transactions on electron devices
Volume40
Issue number11
DOIs
Publication statusPublished - 1993

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BiCMOS technology
Oxides
Electric potential
Electric fields
Ions
Substrates
Processing

Keywords

  • IR-55683
  • METIS-310957

Cite this

Zhou, M-J., Zhou, M-J., de Bruycker, A., A., Van Calster, A., & Witters, J. (1993). High voltage implanted RESURF p-LDMOS using BiCMOS technology. IEEE transactions on electron devices, 40(11), 425-429. https://doi.org/10.1109/16.239814
Zhou, Ming-Jiang ; Zhou, Ming-Jiang ; de Bruycker, A., A. ; Van Calster, A. ; Witters, J. / High voltage implanted RESURF p-LDMOS using BiCMOS technology. In: IEEE transactions on electron devices. 1993 ; Vol. 40, No. 11. pp. 425-429.
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abstract = "Summary form only given. The authors present a complementary RESURF p-LDMOS in which the n+ buried layer is used as an effective substrate and a field implant is introduced to modify the drift charges. The implant conditions in this case, particularly the placements, are studied. After processing, VB are investigated with different implant placement (LA, LB) and field oxide lengths LF. It is found that although the ion implant covers part of the drift region, the device performance can still be greatly improved. Results show that a long enough implant, compatible with LF, under the field oxide can result in the maximum, VB= VBP. This is verified by simulation results, which show that the peak of the surface electric field is significantly reduced. Results also show that a full length (LF) implantation under the field oxide can result in the minimum R on for a fixed LF",
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Zhou, M-J, Zhou, M-J, de Bruycker, A., A, Van Calster, A & Witters, J 1993, 'High voltage implanted RESURF p-LDMOS using BiCMOS technology' IEEE transactions on electron devices, vol. 40, no. 11, pp. 425-429. https://doi.org/10.1109/16.239814

High voltage implanted RESURF p-LDMOS using BiCMOS technology. / Zhou, Ming-Jiang; Zhou, Ming-Jiang; de Bruycker, A., A.; Van Calster, A.; Witters, J.

In: IEEE transactions on electron devices, Vol. 40, No. 11, 1993, p. 425-429.

Research output: Contribution to journalArticleAcademic

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T1 - High voltage implanted RESURF p-LDMOS using BiCMOS technology

AU - Zhou, Ming-Jiang

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AU - Witters, J.

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AB - Summary form only given. The authors present a complementary RESURF p-LDMOS in which the n+ buried layer is used as an effective substrate and a field implant is introduced to modify the drift charges. The implant conditions in this case, particularly the placements, are studied. After processing, VB are investigated with different implant placement (LA, LB) and field oxide lengths LF. It is found that although the ion implant covers part of the drift region, the device performance can still be greatly improved. Results show that a long enough implant, compatible with LF, under the field oxide can result in the maximum, VB= VBP. This is verified by simulation results, which show that the peak of the surface electric field is significantly reduced. Results also show that a full length (LF) implantation under the field oxide can result in the minimum R on for a fixed LF

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Zhou M-J, Zhou M-J, de Bruycker, A. A, Van Calster A, Witters J. High voltage implanted RESURF p-LDMOS using BiCMOS technology. IEEE transactions on electron devices. 1993;40(11):425-429. https://doi.org/10.1109/16.239814