High voltage implanted RESURF p-LDMOS using BICMOS technology

Ming-Jiang Zhou, Ming-Jiang Zhou, A. De Bruycker, A. Van Calster, J. Witters

    Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

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    Abstract

    The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied.
    Original languageEnglish
    Title of host publicationProceedings of the 51st Annual Device Research Conference, 1993
    Place of PublicationPiscataway, NJ, USA
    PublisherIEEE
    Pages120-121
    DOIs
    Publication statusPublished - 1993
    Event51st Annual Device Research Conference 1993 - Santa Barbara, United States
    Duration: 21 Jun 1993 → 23 Jun 1993
    Conference number: 51

    Publication series

    Name
    PublisherIEEE

    Conference

    Conference51st Annual Device Research Conference 1993
    Abbreviated titleDRC 1993
    CountryUnited States
    CitySanta Barbara
    Period21/06/93 → 23/06/93

    Keywords

    • IR-56052
    • METIS-310959

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      Zhou, M-J., Zhou, M-J., De Bruycker, A., Van Calster, A., & Witters, J. (1993). High voltage implanted RESURF p-LDMOS using BICMOS technology. In Proceedings of the 51st Annual Device Research Conference, 1993 (pp. 120-121). Piscataway, NJ, USA: IEEE. https://doi.org/10.1109/DRC.1993.1009607