High voltage implanted RESURF p-LDMOS using BICMOS technology

Ming-Jiang Zhou, A. De Bruycker, A. Van Calster, J. Witters

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    The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied.
    Original languageEnglish
    Title of host publicationProceedings of the 51st Annual Device Research Conference, 1993
    Place of PublicationPiscataway, NJ, USA
    Publication statusPublished - 1993
    Event51st Annual Device Research Conference 1993 - Santa Barbara, United States
    Duration: 21 Jun 199323 Jun 1993
    Conference number: 51


    Conference51st Annual Device Research Conference 1993
    Abbreviated titleDRC 1993
    Country/TerritoryUnited States
    CitySanta Barbara


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