High voltage implanted RESURF p-LDMOS using BICMOS technology

Ming-Jiang Zhou; A. De Bruycker; A. Van Calster; J. Witters

doi:10.1109/DRC.1993.1009607

High voltage implanted RESURF p-LDMOS using BICMOS technology

Ming-Jiang Zhou, A. De Bruycker, A. Van Calster, J. Witters

Research output: Chapter in Book/Report/Conference proceeding › Conference contribution › Academic › peer-review

58 Downloads (Pure)

Abstract

The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied.

Original language	English
Title of host publication	Proceedings of the 51st Annual Device Research Conference, 1993
Place of Publication	Piscataway, NJ, USA
Publisher	IEEE
Pages	120-121
DOIs	https://doi.org/10.1109/DRC.1993.1009607
Publication status	Published - 1993
Event	51st Annual Device Research Conference 1993 - Santa Barbara, United States Duration: 21 Jun 1993 → 23 Jun 1993 Conference number: 51

Conference

Conference	51st Annual Device Research Conference 1993
Abbreviated title	DRC 1993
Country	United States
City	Santa Barbara
Period	21/06/93 → 23/06/93

Access to Document

10.1109/DRC.1993.1009607

Zhou1993high
open
Final published version, 141 KB

Fingerprint Dive into the research topics of 'High voltage implanted RESURF p-LDMOS using BICMOS technology'. Together they form a unique fingerprint.

Cite this

@inproceedings{f70164b8ac69467589a70d74f72eb464,

title = "High voltage implanted RESURF p-LDMOS using BICMOS technology",

abstract = "The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied.",

author = "Ming-Jiang Zhou and {De Bruycker}, A. and {Van Calster}, A. and J. Witters",

year = "1993",

doi = "10.1109/DRC.1993.1009607",

language = "English",

pages = "120--121",

booktitle = "Proceedings of the 51st Annual Device Research Conference, 1993",

publisher = "IEEE",

address = "United States",

note = "51st Annual Device Research Conference 1993, DRC 1993 ; Conference date: 21-06-1993 Through 23-06-1993",

}

TY - GEN

T1 - High voltage implanted RESURF p-LDMOS using BICMOS technology

AU - Zhou, Ming-Jiang

AU - De Bruycker, A.

AU - Van Calster, A.

AU - Witters, J.

N1 - Conference code: 51

PY - 1993

Y1 - 1993

N2 - The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied.

AB - The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied.

U2 - 10.1109/DRC.1993.1009607

DO - 10.1109/DRC.1993.1009607

M3 - Conference contribution

SP - 120

EP - 121

BT - Proceedings of the 51st Annual Device Research Conference, 1993

PB - IEEE

CY - Piscataway, NJ, USA

T2 - 51st Annual Device Research Conference 1993

Y2 - 21 June 1993 through 23 June 1993

ER -