Abstract
The hgh voltage DMOST based on BICMOS technology[l] are becoming more attractive because of its easy integration with bipolar and CMOS devices. Its process is required to be as compatible as possible with the BICMOS technology. This paper presents a complementary RESURF[2] p-LDMOS in whch the ni buried layer is used for the first time, as an effective substrate and the field implant is introduced to modify the drift charges. The implant conditions in t h ~ csa se, particularly the placements, will be studied.
Original language | English |
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Title of host publication | Proceedings of the 51st Annual Device Research Conference, 1993 |
Place of Publication | Piscataway, NJ, USA |
Publisher | IEEE |
Pages | 120-121 |
DOIs | |
Publication status | Published - 1993 |
Event | 51st Annual Device Research Conference 1993 - Santa Barbara, United States Duration: 21 Jun 1993 → 23 Jun 1993 Conference number: 51 |
Conference
Conference | 51st Annual Device Research Conference 1993 |
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Abbreviated title | DRC 1993 |
Country/Territory | United States |
City | Santa Barbara |
Period | 21/06/93 → 23/06/93 |