High voltage photovoltaic system implementing Si/SiC-based active neutral-point-clamped converter

Thiago B. Soeiro, Ki Bum Park, Francisco Canales

Research output: Chapter in Book/Report/Conference proceedingConference contributionAcademicpeer-review

26 Citations (Scopus)

Abstract

This article proposes a power converter solution for 1.5 kV DC photovoltaic applications and benchmark the benefits of commercially available SiC MOSFETS for the system power efficiency. The circuit solution is based on a full power factor three-level active neutral-point-clamped converter featuring reduced numbers of high-frequency switched semiconductors. A combination of Si IGBT and SiC MOSFET is selected for the converter implementation because of the tradeoff between system cost and power efficiency. Finally, the advantages of the proposed converter is verified by the analysis of a 200 kVA power generation system employing this solution and other conventional two-and three-level voltage source converters.

Original languageEnglish
Title of host publicationIECON 2017 - 43rd Annual Conference of the IEEE Industrial Electronics Society
PublisherIEEE
Pages1220-1225
Number of pages6
ISBN (Electronic)978-1-5386-1127-2
ISBN (Print)978-1-5386-1128-9, 978-1-5386-1126-5
DOIs
Publication statusPublished - 15 Dec 2017
Externally publishedYes
Event43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017 - Beijing, China, Beijing, China
Duration: 29 Oct 20171 Nov 2017
Conference number: 43

Conference

Conference43rd Annual Conference of the IEEE Industrial Electronics Society, IECON 2017
Abbreviated titleIECON 2017
Country/TerritoryChina
CityBeijing
Period29/10/171/11/17

Keywords

  • Switches
  • Reactive power
  • Silicon carbide
  • MOSFET
  • Insulated gate bipolar transistors
  • Photovoltaic systems
  • Silicon
  • n/a OA procedure

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