Higher gain in 977-nm-pumped Al2O3:Er3+ integrated optical amplifiers

J. Bradley, L. Agazzi, D. Geskus, F. Ay, Kerstin Worhoff, Markus Pollnau

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    In this paper we experimentally compare pumping at 977 nm and 1480 nm and the influence on gain in an Al2O3:Er3+ amplifier. We show that significantly higher gain can be achieved when pumping at 977 nm, and a record-high peak gain and gain bandwidth obtains compared to previous results in this material. Al2O3:Er3+ straight channel waveguide amplifiers were fabricated on thermally-oxidized silicon substrates by reactive co-sputtering, standard lithography and reactive ion etching. The amplifiers were ~6-cm-long with a waveguide cross section of 1 um x 4 um and an etch depth of ~70 nm. The waveguide dimensions were selected for single-mode propagation at wavelengths of 977 nm and above, good overlap of pump and signal mode profiles (for both 977-nm and 1480-nm pumping) and strong confinement of the propagating pump and signal within the active region.
    Original languageUndefined
    Title of host publicationLasers and Electro-Optics 2009 and the European Quantum Electronics Conference. CLEO Europe - EQEC 2009. European Conference on
    Place of PublicationPiscataway
    PagesCE1.4 MON
    Number of pages1
    ISBN (Print)978-1-4244-4079-5
    Publication statusPublished - 7 Aug 2009
    Event11th European Quantum Electronics Conference, EQEC 2009 - Munich, Germany
    Duration: 14 Jun 200919 Jun 2009
    Conference number: 11

    Publication series



    Conference11th European Quantum Electronics Conference, EQEC 2009
    Abbreviated titleEQEC 2009
    Internet address


    • METIS-265811
    • IOMS-APD: Active Photonic Devices
    • EWI-17480
    • IR-69969

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