Highly conductive p-type nc-SiOX:H thin films deposited at 130°C via efficient incorporation of plasma synthesized silicon nanocrystals and their application in SHJ solar cells

Antonio J. Olivares, Johannes P. Seif, Pierre Alexis Repecaud, Christophe Longeaud, Monica Morales-Masis, Martin Bivour, Pere Roca i Cabarrocas*

*Corresponding author for this work

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