Highly-doped in-plane Si electrodes embedded between free-hanging microfluidic channels

Yiyuan Zhao, Henk-Willem Veltkamp, Thomas Victor Paul Schut, Jarno Groenesteijn, Meint J. de Boer, Remco J. Wiegerink, Joost Conrad Lötters

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    Abstract

    Highly-doped in-plane Si electrodes were embedded between free-hanging microfluidic channels using Surface Channel Technology. The cross-sectional area of the electrodes can be controlled by tuning the distance between the release windows and the channels. The large cross-sectional area of the electrodes is especially beneficial as microheater, but they also enable resistive or capacitive readout in e.g. flow sensors.
    Original languageEnglish
    Publication statusPublished - 23 Sep 2019
    Event45th International Conference on Micro- and Nano-Engineering, MNE 2019 - Rodos Palace Hotel, Rhodes, Greece
    Duration: 23 Sep 201926 Sep 2019
    Conference number: 45
    http://mne2019.org/

    Conference

    Conference45th International Conference on Micro- and Nano-Engineering, MNE 2019
    Abbreviated titleMNE 2019
    CountryGreece
    CityRhodes
    Period23/09/1926/09/19
    Internet address

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  • Cite this

    Zhao, Y., Veltkamp, H-W., Schut, T. V. P., Groenesteijn, J., de Boer, M. J., Wiegerink, R. J., & Lötters, J. C. (2019). Highly-doped in-plane Si electrodes embedded between free-hanging microfluidic channels. Abstract from 45th International Conference on Micro- and Nano-Engineering, MNE 2019, Rhodes, Greece.