Highly-doped in-plane Si electrodes were embedded between free-hanging microfluidic channels using Surface Channel Technology. The cross-sectional area of the electrodes can be controlled by tuning the distance between the release windows and the channels. The large cross-sectional area of the electrodes is especially beneficial as microheater, but they also enable resistive or capacitive readout in e.g. flow sensors.
|Publication status||Published - 23 Sep 2019|
|Event||45th International Conference on Micro- and Nano-Engineering, MNE 2019 - Rodos Palace Hotel, Rhodes, Greece|
Duration: 23 Sep 2019 → 26 Sep 2019
Conference number: 45
|Conference||45th International Conference on Micro- and Nano-Engineering, MNE 2019|
|Abbreviated title||MNE 2019|
|Period||23/09/19 → 26/09/19|
Zhao, Y., Veltkamp, H-W., Schut, T. V. P., Groenesteijn, J., de Boer, M. J., Wiegerink, R. J., & Lötters, J. C. (2019). Highly-doped in-plane Si electrodes embedded between free-hanging microfluidic channels. Abstract from 45th International Conference on Micro- and Nano-Engineering, MNE 2019, Rhodes, Greece.