Abstract
Epitaxial growth of rare-earth-ion-activated KY(1-x-y)Gd(x)Lu(y)(WO4)2 co-doped thin layers onto KY(WO4)2 substrates has enabled lattice-matched waveguides with high refractive-index contract and large variation of the active rare-earth-ion concentration. In Yb3+-activated micro-structured channel waveguides, we demonstrated lasers with 418 mW of continuous-wave output power at 1023 nm and a slope efficiency of 71% versus launched pump power at 981 nm. Channel waveguide lasers operating on the 981-nm zero-phonon line were demonstrated under pumping at 934 nm with an output power of 650 mW and a slope efficiency of 76% versus absorbed pump power. Lasing with a record-low quantum defect of 0.7% was achieved. In a feasibility study, a device comprising a tapered active channel waveguide and a passive planar pump waveguide, fabricated by multi-layer growth of lattice-matched layers, was demonstrated as a laser by diode-side pumping with a high-power, multi-mode diode bar. This approach offers the potential for significantly increased output powers from channel waveguide lasers. Tm3+-activated channel waveguide lasers demonstrated a maximum output power of 300 mW and slope efficiency of 70%, when pumping near 800 nm. Lasing was obtained at various wavelengths between 1810 nm and 2037 nm. These lasers were operated with resonators exploiting either butt-coupled mirrors, providing only a non-permanent solution, or based on Fresnel reflection at the waveguide end-facets, resulting in laser emission from both waveguide ends and without control of the laser wavelength. Currently we are inscribing Bragg gratings into the top cladding to provide a stable resonator configuration that allows for effective wavelength selection.
Original language | English |
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Title of host publication | Solid State Lasers XXII |
Subtitle of host publication | Technology and Devices |
Place of Publication | Bellingham, WA |
Publisher | SPIE |
Number of pages | 1 |
Publication status | Published - Feb 2013 |
Event | SPIE Laser Source Technologies and Industrial Lasers and Applications Conference, LASE 2013 - The Moscone Center, San Francisco, United States Duration: 2 Feb 2013 → 7 Feb 2013 |
Conference
Conference | SPIE Laser Source Technologies and Industrial Lasers and Applications Conference, LASE 2013 |
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Abbreviated title | LASE |
Country/Territory | United States |
City | San Francisco |
Period | 2/02/13 → 7/02/13 |
Keywords
- IOMS-APD: Active Photonic Devices
- IR-84573
- METIS-296345
- EWI-23151