Highly efficient Gd, Lu co-doped KYW:Yb3+ planar and channel waveguide lasers

D. Geskus, S. Aravazhi, Kerstin Worhoff, Markus Pollnau

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    Waveguide lasing is achieved in crystalline Gd3+, Lu3+ co-doped KY(WO4)2:Yb3+ (KYW) thin layers grown on undoped substrates. While the optimum Yb concentration for lasing of 1-3at.% leads to a refractive-index contrast between layer and substrate of only a few times 10-4, further increase up to 10-2 can be achieved by co-doping the layer with large amounts of optically inert Gd and Lu ions. The resulting fundamental-mode waveguides have much smaller thickness, thus greatly facilitating microstructuring by ion beam etching. In such KYW:Gd,Lu,Yb layers, in which the Yb ion exhibits spectropcopic properties very similar to those in KYW:Yb, we have demonstrated planar waveguide lasing with 82% slope efficiency and channel waveguide lasing with 61% slope efficiency, with pump thresholds of only 18 mW and 5 mW, respectively.
    Original languageEnglish
    Title of host publicationIV International Workshop on Photonic and Electronic Materials 2010
    Subtitle of host publicationScientific Program and Workshop Abstracts
    Place of PublicationSan Sebastian, Spain
    PublisherDostonia International Physics Center
    Number of pages1
    Publication statusPublished - Jul 2010
    EventIV International Workshop on Photonic and Electronic Materials 2010 - San Sebastian, Spain
    Duration: 5 Jul 20107 Jul 2010


    WorkshopIV International Workshop on Photonic and Electronic Materials 2010
    CitySan Sebastian


    • METIS-276043
    • IOMS-APD: Active Photonic Devices
    • EWI-18091
    • IR-72293


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