Highly efficient silicon light emitting diode

P. Le Minh, J. Holleman, Hans Wallinga

    Research output: Contribution to conferencePaper

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    Abstract

    In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.
    Original languageUndefined
    Pages46-50
    Number of pages5
    Publication statusPublished - 27 Nov 2002
    Event5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands
    Duration: 27 Nov 200228 Nov 2002
    Conference number: 5

    Workshop

    Workshop5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
    Abbreviated titleSAFE
    CountryNetherlands
    CityVeldhoven
    Period27/11/0228/11/02

    Keywords

    • strain field
    • spatial confinement
    • EWI-15594
    • IR-58150
    • Dislocation loops
    • Silicon LED

    Cite this

    Le Minh, P., Holleman, J., & Wallinga, H. (2002). Highly efficient silicon light emitting diode. 46-50. Paper presented at 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002, Veldhoven, Netherlands.