Highly efficient silicon light emitting diode

P. Le Minh; J. Holleman; Hans Wallinga

Highly efficient silicon light emitting diode

P. Le Minh
, J. Holleman
, Hans Wallinga

Research output: Contribution to conference › Paper

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Abstract

In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.

Original language	Undefined
Pages	46-50
Number of pages	5
Publication status	Published - 27 Nov 2002
Event	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 - Veldhoven, Netherlands Duration: 27 Nov 2002 → 28 Nov 2002 Conference number: 5

Workshop

Workshop	5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002
Abbreviated title	SAFE
Country/Territory	Netherlands
City	Veldhoven
Period	27/11/02 → 28/11/02

UN SDGs

This output contributes to the following UN Sustainable Development Goals (SDGs)

SDG 7 Affordable and Clean Energy

Keywords

strain field
spatial confinement
EWI-15594
IR-58150
Dislocation loops
Silicon LED

Access to Document

LeMinh00highly

Cite this

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title = "Highly efficient silicon light emitting diode",

abstract = "In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.",

keywords = "strain field, spatial confinement, EWI-15594, IR-58150, Dislocation loops, Silicon LED",

author = "\{Le Minh\}, P. and J. Holleman and Hans Wallinga",

year = "2002",

month = nov,

day = "27",

language = "Undefined",

pages = "46--50",

note = "5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002 ; Conference date: 27-11-2002 Through 28-11-2002",

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TY - CONF

T1 - Highly efficient silicon light emitting diode

AU - Le Minh, P.

AU - Holleman, J.

AU - Wallinga, Hans

N1 - Conference code: 5

PY - 2002/11/27

Y1 - 2002/11/27

N2 - In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.

AB - In this paper, we describe the fabrication, using standard silicon processing techniques, of silicon light-emitting diodes (LED) that efficiently emit photons with energy around the silicon bandgap. The improved efficiency had been explained by the spatial confinement of charge carriers due to a local strain field that is formed by dislocation loop arrays. The dependence of device electroluminescent properties on the annealing conditions is carefully examined as a high temperature process has profound influence on these dislocations. Increased luminescent intensity at higher device temperature, together with pure diffusion current conduction mechanism evidently shows the influence of the dislocation loops. The electrical properties of the diode are reasonable with low leakage reverse current.

KW - strain field

KW - spatial confinement

KW - EWI-15594

KW - IR-58150

KW - Dislocation loops

KW - Silicon LED

M3 - Paper

SP - 46

EP - 50

T2 - 5th Annual Workshop on Semiconductors Advances for Future Electronics, SAFE 2002

Y2 - 27 November 2002 through 28 November 2002

ER -