Abstract
Channel waveguide lasers operating at 981 nm are demonstrated in KY1−x−yGdxLuy(WO4)2:Yb3+ waveguides grown by liquid phase epitaxy onto undoped KY(WO4)2 substrates and microstructured by Ar+ beam etching. Under pumping at 934 nm of samples with different waveguide geometry and outcoupling degree, a record-high slope efficiency of 76% versus absorbed pump power and a record-high output power of 650 mW for rare-earth-ion-doped microstructured channel waveguide lasers is achieved. The laser performance is compared to that of the same devices when pumping at 981 nm and lasing near 1025 nm.
Original language | English |
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Pages (from-to) | 13773-13778 |
Number of pages | 6 |
Journal | Optics express |
Volume | 21 |
Issue number | 11 |
DOIs | |
Publication status | Published - Jun 2013 |
Keywords
- IOMS-APD: Active Photonic Devices
- Channeled
- Lasers
- Waveguides
- Ytterbium