Abstract
Highly oriented polysilylene layers have potential applications in electrophotography, nonlinear optics, display fabrication, and microlithography. The preparation of such layers by crystallization on a highly oriented PTFE substrate is reported, and their assessment by optical birefringence, electron diffraction and dichroic infrared experiments described. Why this orientation technique works is not yet clear, especially as it can be applied to poly(di-n-alkylsilylen)s with different crystal structures. Several possible underlying mechanisms are discussed.
| Original language | English |
|---|---|
| Pages (from-to) | 917-919 |
| Journal | Advanced materials |
| Volume | 5 |
| Issue number | 12 |
| DOIs | |
| Publication status | Published - 1993 |
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