Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

M. Brauns, Joost Ridderbos, Joost Ridderbos, Ang Li, Wilfred Gerard van der Wiel, Erik P.A.M. Bakkers, Floris Arnoud Zwanenburg

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    Abstract

    We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.
    Original languageUndefined
    Pages (from-to)143113
    Number of pages4
    JournalApplied physics letters
    Volume109
    Issue number14
    DOIs
    Publication statusPublished - 3 Oct 2016

    Keywords

    • EC Grant Agreement nr.: FP7/610637
    • IR-103199
    • METIS-321685
    • EWI-27628

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