Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

Matthias Brauns; Joost Ridderbos; Ang Li; Wilfred G. van der Wiel; Erik P.A.M. Bakkers; Floris A. Zwanenburg

doi:10.1063/1.4963715

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

Matthias Brauns, Joost Ridderbos, Ang Li, Wilfred G. van der Wiel, Erik P.A.M. Bakkers, Floris A. Zwanenburg

Research output: Contribution to journal › Article › Academic › peer-review

21 Citations (Scopus)

54 Downloads (Pure)

Abstract

We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

Original language	English
Pages (from-to)	143113
Number of pages	4
Journal	Applied physics letters
Volume	109
Issue number	14
DOIs	https://doi.org/10.1063/1.4963715
Publication status	Published - 3 Oct 2016

Keywords

EC Grant Agreement nr.: FP7/610637
2023 OA procedure

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10.1063/1.4963715

ArticleFinal published version, 1.06 MBLicence: Taverne

21 Citations
1 PhD Thesis - Research UT, graduation UT

Quantum Dots and Superconductivity in Ge-Si Nanowires
Ridderbos, J., 28 Feb 2018, Enschede: University of Twente. 173 p.
Research output: Thesis › PhD Thesis - Research UT, graduation UT

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title = "Highly tuneable hole quantum dots in Ge-Si core-shell nanowires",

abstract = "We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.",

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AU - Brauns, Matthias

AU - Ridderbos, Joost

AU - Li, Ang

AU - van der Wiel, Wilfred G.

AU - Bakkers, Erik P.A.M.

AU - Zwanenburg, Floris A.

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N2 - We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

AB - We define single quantum dots of lengths varying from 60 nm up to nearly half a micron in Ge-Si core-shell nanowires. The charging energies scale inversely with the quantum dot length between 18 and 4 meV. Subsequently, we split up a long dot into a double quantum dot with a separate control over the tunnel couplings and the electrochemical potential of each dot. Both single and double quantum dot configurations prove to be very stable and show excellent control over the electrostatic environment of the dots, making this system a highly versatile platform for spin-based quantum computing.

KW - EC Grant Agreement nr.: FP7/610637

KW - 2023 OA procedure

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M3 - Article

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VL - 109

SP - 143113

JO - Applied physics letters

JF - Applied physics letters

IS - 14

ER -

Highly tuneable hole quantum dots in Ge-Si core-shell nanowires

Abstract

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Research output

Quantum Dots and Superconductivity in Ge-Si Nanowires

Cite this