Hot-electron transport in the spin-valve transistor

R. Vlutters

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    71 Downloads (Pure)

    Abstract

    This thesis discusses research on the hot-electron transport in the spin-valve transistor (SVT). This 3-terminal device consists of a silicon emitter and collector with in between a base consisting of magnetic (NiFe and Co) and non-magnetic (Au) metal layers, a so-called spin-valve multilayer. Furthermore, the base includes thin layers of Pt and Au to form two different Schottky barriers with the Si emitter and collector. The collector current is dependent on the amount of current that is injected from the emitter into the Pt/NiFe/Au/Co/Au base, and on the magnetic state of the spin-valve multilayer. When the NiFe and Co layers are magnetized in the same direction (parallel), more collector current is measured, than when the layers are magnetized oppositely (anti-parallel). As described in this thesis, the spin-valve transistor can operate at room temperature and shows a large relative change in collector current (magnetocurrent > 300%) within small magnetic fields of only some Oe’s. Therefore, the spin-valve transistor is extremely suited to measure magnetic fields.
    Original languageUndefined
    Supervisors/Advisors
    • Popma, T.J.A., Advisor
    • Lodder, J.C., Supervisor
    Thesis sponsors
    Award date1 May 2001
    Place of PublicationEnschede
    Publisher
    Print ISBNs90 365 1585 8
    Publication statusPublished - May 2001

    Keywords

    • SMI-TST: From 2006 in EWI-TST
    • METIS-111350
    • SMI-MAT: MATERIALS
    • EWI-5335
    • IR-38623

    Cite this

    Vlutters, R. (2001). Hot-electron transport in the spin-valve transistor. Enschede: University of Twente.
    Vlutters, R.. / Hot-electron transport in the spin-valve transistor. Enschede : University of Twente, 2001. 142 p.
    @phdthesis{5b8531c33e9b45098ab9a0c71d543048,
    title = "Hot-electron transport in the spin-valve transistor",
    abstract = "This thesis discusses research on the hot-electron transport in the spin-valve transistor (SVT). This 3-terminal device consists of a silicon emitter and collector with in between a base consisting of magnetic (NiFe and Co) and non-magnetic (Au) metal layers, a so-called spin-valve multilayer. Furthermore, the base includes thin layers of Pt and Au to form two different Schottky barriers with the Si emitter and collector. The collector current is dependent on the amount of current that is injected from the emitter into the Pt/NiFe/Au/Co/Au base, and on the magnetic state of the spin-valve multilayer. When the NiFe and Co layers are magnetized in the same direction (parallel), more collector current is measured, than when the layers are magnetized oppositely (anti-parallel). As described in this thesis, the spin-valve transistor can operate at room temperature and shows a large relative change in collector current (magnetocurrent > 300{\%}) within small magnetic fields of only some Oe’s. Therefore, the spin-valve transistor is extremely suited to measure magnetic fields.",
    keywords = "SMI-TST: From 2006 in EWI-TST, METIS-111350, SMI-MAT: MATERIALS, EWI-5335, IR-38623",
    author = "R. Vlutters",
    note = "Imported from SMI Theses",
    year = "2001",
    month = "5",
    language = "Undefined",
    isbn = "90 365 1585 8",
    publisher = "University of Twente",
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    Hot-electron transport in the spin-valve transistor. / Vlutters, R.

    Enschede : University of Twente, 2001. 142 p.

    Research output: ThesisPhD Thesis - Research UT, graduation UT

    TY - THES

    T1 - Hot-electron transport in the spin-valve transistor

    AU - Vlutters, R.

    N1 - Imported from SMI Theses

    PY - 2001/5

    Y1 - 2001/5

    N2 - This thesis discusses research on the hot-electron transport in the spin-valve transistor (SVT). This 3-terminal device consists of a silicon emitter and collector with in between a base consisting of magnetic (NiFe and Co) and non-magnetic (Au) metal layers, a so-called spin-valve multilayer. Furthermore, the base includes thin layers of Pt and Au to form two different Schottky barriers with the Si emitter and collector. The collector current is dependent on the amount of current that is injected from the emitter into the Pt/NiFe/Au/Co/Au base, and on the magnetic state of the spin-valve multilayer. When the NiFe and Co layers are magnetized in the same direction (parallel), more collector current is measured, than when the layers are magnetized oppositely (anti-parallel). As described in this thesis, the spin-valve transistor can operate at room temperature and shows a large relative change in collector current (magnetocurrent > 300%) within small magnetic fields of only some Oe’s. Therefore, the spin-valve transistor is extremely suited to measure magnetic fields.

    AB - This thesis discusses research on the hot-electron transport in the spin-valve transistor (SVT). This 3-terminal device consists of a silicon emitter and collector with in between a base consisting of magnetic (NiFe and Co) and non-magnetic (Au) metal layers, a so-called spin-valve multilayer. Furthermore, the base includes thin layers of Pt and Au to form two different Schottky barriers with the Si emitter and collector. The collector current is dependent on the amount of current that is injected from the emitter into the Pt/NiFe/Au/Co/Au base, and on the magnetic state of the spin-valve multilayer. When the NiFe and Co layers are magnetized in the same direction (parallel), more collector current is measured, than when the layers are magnetized oppositely (anti-parallel). As described in this thesis, the spin-valve transistor can operate at room temperature and shows a large relative change in collector current (magnetocurrent > 300%) within small magnetic fields of only some Oe’s. Therefore, the spin-valve transistor is extremely suited to measure magnetic fields.

    KW - SMI-TST: From 2006 in EWI-TST

    KW - METIS-111350

    KW - SMI-MAT: MATERIALS

    KW - EWI-5335

    KW - IR-38623

    M3 - PhD Thesis - Research UT, graduation UT

    SN - 90 365 1585 8

    PB - University of Twente

    CY - Enschede

    ER -

    Vlutters R. Hot-electron transport in the spin-valve transistor. Enschede: University of Twente, 2001. 142 p.