Hybrid integrated near UV lasers using the deep-UV Al2O3 platform

C.A.A. Franken*, W.A.P.M. Hendriks, L.V. Winkler, M. Dijkstra, A.R. do Nascimento Jr., A. van Rees, M.R.S. Mardani, R. Dekker, J. van Kerkhof, P.J.M. van der Slot, S.M. García Blanco, K.-J. Boller

*Corresponding author for this work

Research output: Working paper

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Abstract

Hybrid integrated diode lasers have so far been realized using silicon, polymer, and silicon nitride (Si3N4) waveguide platforms for extending on-chip tunable light engines from the infrared throughout the visible range. Here we demonstrate the first hybrid integrated laser using the aluminum oxide (Al2O3) deep-UV capable waveguide platform. By permanently coupling low-loss Al2O3 frequency-tunable Vernier feedback circuits with GaN double-pass amplifiers in a hermetically sealed housing, we demonstrate the first extended cavity diode laser (ECDL) in the near UV. The laser shows a maximum fiber-coupled output power of 0.74 mW, corresponding to about 3.5 mW on chip, and tunes more than 4.4 nm in wavelength from 408.1 nm to 403.7 nm. Integrating stable, single-mode and tunable lasers into a deep-UV platform opens a new path for chip-integrated photonic applications.
Original languageEnglish
PublisherArXiv.org
DOIs
Publication statusPublished - 22 Feb 2023

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