Hybrid integrated semiconductor lasers with silicon nitride feedback circuits

Klaus-J. Boller*, Albert van Rees, Youwen Fan, Jesse Mak, Rob E. M. Lammerink, Cornelis A. A. Franken, Peter J. M. van der Slot, David A. I. Marpaung, Carsten Fallnich, Jörn P. Epping, Ruud M. Oldenbeuving, Dimitri Geskus, Ronald Dekker, Ilka Visscher, Robert Grootjans, Chris G. H. Roeloffzen, Marcel Hoekman, Edwin J. Klein, Arne Leinse, René G. Heideman

*Corresponding author for this work

Research output: Working paper

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Hybrid integrated semiconductor laser sources offering extremely narrow spectral linewidth as well as compatibility for embedding into integrated photonic circuits are of high importance for a wide range of applications. We present an overview on our recently developed hybrid-integrated diode lasers with feedback from low-loss silicon nitride (Si3N4 in SiO2) circuits, to provide sub-100-Hz-level intrinsic linewidths, up to 120 nm spectral coverage around 1.55 um wavelength, and an output power above 100 mW. We show dual-wavelength operation, dual-gain operation, laser frequency comb generation, and present work towards realizing a visible-light hybrid integrated diode laser.
Original languageEnglish
Number of pages25
Publication statusPublished - 25 Nov 2019


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